Memory

Part Number	Description / PDF	Quantity
BR93A46RFJ-WME2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8SOPJ	2400
BR25S320NUX-WTR ROHM Semiconductor	IC EEPROM 32KBIT VSON008X2030	3832
BR24L32F-WE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 400KHZ 8SOP	514
BR25H160FJ-2CE2 ROHM Semiconductor	IC EEPROM 16KBIT SPI 10MHZ 8SOPJ	2296
BR93G66FVM-3AGTTR ROHM Semiconductor	IC EEPROM 4KBIT SPI 3MHZ 8MSOP	3000
BR24G01FVT-3GE2 ROHM Semiconductor	IC EEPROM 1KBIT I2C 8TSSOPB	1954
BR93C56-WMN6TP ROHM Semiconductor	IC EEPROM 4KBIT SPI 2MHZ 8SO	0
BR93L66FV-WE2 ROHM Semiconductor	IC EEPROM 4KBIT SPI 2MHZ 8SSOPB	1558
BR24L04FJ-WE2 ROHM Semiconductor	IC EEPROM 4K I2C 400KHZ 8SOPJ	175
BRCB032GWZ-3E2 ROHM Semiconductor	IC EEPROM 32KBIT I2C UCSP30L1	1247
BR24G16FVT-3GE2 ROHM Semiconductor	IC EEPROM 16KBIT I2C 8TSSOP	3000
BR25A1MFJ-3MGE2 ROHM Semiconductor	IC EEPROM 1MBIT SPI 10MHZ 8SOPJ	2419
BR93A76RF-WME2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 2MHZ 8SOP	2500
BR24T02F-WE2 ROHM Semiconductor	IC EEPROM 2KBIT I2C 400KHZ 8SOP	2500
BR24G128FVT-3AGE2 ROHM Semiconductor	IC EEPROM 128KBIT I2C 8TSSOPB	1780
BR93G76FVJ-3BGTE2 ROHM Semiconductor	IC EEPROM 8K SPI 3MHZ 8TSSOP	2500
BR93G46FV-3BGTE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 3MHZ 8SSOPB	2490
BR93G46FJ-3GTE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 3MHZ 8SOPJ	2455
BR25S256FJ-WE2 ROHM Semiconductor	IC EEPROM 256KBIT SPI 8SOPJ	3609
BR93H46RFVT-2CE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 2MHZ 8TSSOPB	2850

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)