Memory

Part Number	Description / PDF	Quantity
BR24L64FJ-WE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 8SOPJ	5696
BR24G01NUX-3TTR ROHM Semiconductor	IC EEPROM 1KBIT I2C VSON008X2030	3280
BR24L08F-WE2 ROHM Semiconductor	IC EEPROM 8KBIT I2C 400KHZ 8SOP	1560
MSM51V17400F-60TDKX ROHM Semiconductor	IC DRAM 16MBIT PARALLEL 26TSOP	2103
BR24C04-DW6TP ROHM Semiconductor	IC EEPROM 4KBIT I2C 8TSSOP	0
BR24T02FVM-WGTR ROHM Semiconductor	IC EEPROM 2K I2C 400KHZ 8MSOP	2405
BR24S64F-WE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 400KHZ 8SOP	2034
BR93H76RF-WCE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 1.25MHZ 8SOP	2500
BR93H56RFVM-2CTR ROHM Semiconductor	IC EEPROM 2KBIT SPI 2MHZ 8MSOP	5213
BR24G01F-3GTE2 ROHM Semiconductor	IC EEPROM 1KBIT I2C 400KHZ 8SOP	1164
BR24S16FV-WE2 ROHM Semiconductor	IC EEPROM 16KBIT I2C 8SSOPB	0
BR25H128FJ-2CE2 ROHM Semiconductor	IC EEPROM 128KBIT SPI 8SOPJ	2073
BRCE064GWZ-3E2 ROHM Semiconductor	IC EEPROM 64K I2C 6UCSP25L1	2890
BR25G512F-3GE2 ROHM Semiconductor	IC EEPROM 512KBIT SPI 10MHZ 8SOP	2380
MR45V100AMAZAATL ROHM Semiconductor	IC FRAM 1MBIT SPI 40MHZ 8SOP	0
BR25L080FJ-WE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 5MHZ 8SOPJ	0
BR24G64F-3AGTE2 ROHM Semiconductor	IC EEPROM 64KBIT I2C 1MHZ 8SOP	2034
BR24G128FVJ-3GTE2 ROHM Semiconductor	IC EEPROM 128KBIT I2C 8TSSOP	2020
BR25H010F-2LBH2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 10MHZ 8SOP	247
BR93G46FJ-3AGTE2 ROHM Semiconductor	IC EEPROM 1KBIT SPI 3MHZ 8SOPJ	2500

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)