Memory

Part Number	Description / PDF	Quantity
IS61WV3216DBLL-10TLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 512KBIT PAR 44TSOP II	0
IS43TR81280B-107MBLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 1GBIT PARALLEL 78TWBGA	0
IS42S32160D-6BLI ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 90TFBGA	0
IS65LV256AL-45TLA3-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 256KBIT PAR 28TSOP I	0
IS62WV1288BLL-55HLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 1MBIT PARALLEL 32STSOP I	389
IS66WVC4M16ECLL-7010BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC PSRAM 64MBIT PARALLEL 54VFBGA	0
IS61WV51216EEBLL-10T2LI-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 8MBIT PARALLEL 48TSOP I	0
IS45S16320F-7TLA2-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PAR 54TSOP II	0
IS43LQ32128A-062BLI ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 4GBIT PARALLEL 200VFBGA	69
IS46R16320E-5BLA1 ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TFBGA	0
IS61LPS25636B-200TQLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 9MBIT PARALLEL 100LQFP	15
IS42S16100H-7BL-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 16MBIT PARALLEL 60TFBGA	0
IS66WV1M16EBLL-55BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC PSRAM 16MBIT PARALLEL 48TFBGA	0
IS43TR85120A-15HBLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 4GBIT PARALLEL 78TWBGA	0
IS43LR32100D-6BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 32MBIT PARALLEL 90TFBGA	0
IS63WV1024BLL-12BLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 1MBIT PARALLEL 48MINIBGA	0
IS42S83200G-7BL ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PARALLEL 54TFBGA	0
IS42SM16400M-6BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 64MBIT PARALLEL 54TFBGA	0
IS62C25616BL-45TLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 4MBIT PARALLEL 44TSOP II	5000
IS43DR86400E-3DBLI ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TWBGA	344

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)