Memory

Part Number	Description / PDF	Quantity
AS6C1016-55ZINTR Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 44TSOP II	0
AS4C256M8D3LB-12BIN Alliance Memory, Inc.	IC DRAM 2GBIT PARALLEL 78FBGA	53
AS6C62256A-70SCNTR Alliance Memory, Inc.	IC SRAM 256KBIT PARALLEL 28SOP	0
PC28F128J3F75A Alliance Memory, Inc.	IC FLASH 128MBIT PAR 64EASYBGA	526
AS1C1M16P-70BIN Alliance Memory, Inc.	IC PSRAM 16MBIT PARALLEL 48FBGA	19
AS4C8M16SA-7TCNTR Alliance Memory, Inc.	IC DRAM 128MBIT PAR 54TSOP II	0
AS7C1024B-15TJCN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32TSOP	0
AS4C32M8D1-5TINTR Alliance Memory, Inc.	IC DRAM 256MBIT PAR 66TSOP II	0
AS4C64M8D1-5BCNTR Alliance Memory, Inc.	IC DRAM 512MBIT PARALLEL 60FBGA	0
AS4C256M8D2-25BINTR Alliance Memory, Inc.	IC DRAM 2GBIT PARALLEL 60FBGA	0
AS4C8M32SA-7BCN Alliance Memory, Inc.	IC DRAM 256MBIT PARALLEL 90TFBGA	0
AS7C31026B-12JIN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 44SOJ	0
AS7C1024B-15TJINTR Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32TSOP I	0
AS4C256M16D3LC-10BCN Alliance Memory, Inc.	IC DRAM 4GBIT PARALLEL 96FBGA	206
AS7C256A-20TINTR Alliance Memory, Inc.	IC SRAM 256KBIT PAR 28TSOP I	0
JS28F128J3F75B Alliance Memory, Inc.	IC FLASH 128MBIT PARALLEL 56TSOP	982
AS4C4M16SA-6TCN Alliance Memory, Inc.	IC DRAM 64MBIT PAR 54TSOP II	64
AS7C256A-15TCN Alliance Memory, Inc.	IC SRAM 256KBIT PAR 28TSOP I	0
AS7C1025B-12JCNTR Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
AS4C256M16D3C-12BCNTR Alliance Memory, Inc.	IC DRAM 4GBIT PARALLEL 96FBGA	2006

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)