Memory

Part Number	Description / PDF	Quantity
AS4C32M16SB-7BINTR Alliance Memory, Inc.	IC DRAM 512MBIT PAR 54TSOP II	0
AS6C4008-55STINTR Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 32STSOP	0
AS4C512M8D3LC-12BIN Alliance Memory, Inc.	512M X 8, 1.35V, 800MHZ, DDR3-16	195
AS4C512M8D3LC-12BCN Alliance Memory, Inc.	512M X 8, 1.35V, 800MHZ, DDR3-16	220
AS4C4M16D1A-5TANTR Alliance Memory, Inc.	IC DRAM 64MBIT PAR 66TSOP II	0
PC28F512P30BFB Alliance Memory, Inc.	IC FLASH 512MBIT PARALLEL 64LBGA	1963
AS6C8016B-55BINTR Alliance Memory, Inc.	IC SRAM 8MB PARALLEL 48FPBGA	0
AS6C4008A-55ZINTR Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 32TSOP II	0
N25Q032A13ESFA0F Alliance Memory, Inc.	IC FLSH 32MBIT SPI 108MHZ 16SOP2	1000
M45PE16-VMW6TG Alliance Memory, Inc.	IC FLASH 16MBIT SPI 75MHZ 8SO	1160
AS7C164A-15JINTR Alliance Memory, Inc.	IC SRAM 64KBIT PARALLEL 28SOJ	0
M29F160FT55N3E2 Alliance Memory, Inc.	IC FLASH 16MBIT PARALLEL 48TSOP	947
AS4C256M16D4-75BCN Alliance Memory, Inc.	IC DRAM 4GBIT PARALLEL 96FBGA	194
M29F400FB55N3E2 Alliance Memory, Inc.	IC FLASH 4MBIT PARALLEL 48TSOP	91
PC28F640P30BF65B Alliance Memory, Inc.	IC FLASH 64MBIT PAR 64EASYBGA	1900
AS4C256M16D4-83BIN Alliance Memory, Inc.	IC DRAM 4GBIT PARALLEL 96FBGA	178
AS7C164A-15JIN Alliance Memory, Inc.	IC SRAM 64KBIT PARALLEL 28SOJ	0
AS6C8016B-55BIN Alliance Memory, Inc.	IC SRAM 8MB PARALLEL 48FPBGA	0
AS7C31025C-12TIN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32TSOP II	0
M29F200FB55M3F2 Alliance Memory, Inc.	IC FLASH 2MBIT 44SO	390

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)