Memory

Part Number	Description / PDF	Quantity
AS4C16M16D2-25BCNTR Alliance Memory, Inc.	IC DRAM 256MBIT PARALLEL 84TFBGA	0
AS7C1024B-12JCNTR Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
AS6C1616-55TINL Alliance Memory, Inc.	IC SRAM 16MBIT PARALLEL 48TSOP I	0
AS6C62256-55STCN Alliance Memory, Inc.	IC SRAM 256KBIT PARALLEL 28STSOP	0
AS6C4008-55SIN Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 32SOP	7251
AS4C512M8D3L-12BAN Alliance Memory, Inc.	IC DRAM 4GBIT PARALLEL 78FBGA	3
AS7C34096A-20TCNTR Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44TSOP2	0
AS7C31025B-10JCN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
AS7C34098A-15JIN Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44SOJ	0
AS7C1026C-15JIN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 44SOJ	0
AS7C1024B-15TCN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32TSOP	0
AS4C1G8MD3L-12BCN Alliance Memory, Inc.	IC DRAM 8GBIT PARALLEL 78FBGA	418
AS7C3513B-20TCNTR Alliance Memory, Inc.	IC SRAM 512KBIT PARALLEL 44TSOP2	0
AS7C34098A-15TINTR Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44TSOP2	0
AS7C256A-12JINTR Alliance Memory, Inc.	IC SRAM 256KBIT PARALLEL 28SOJ	0
AS6C1616-55BINTR Alliance Memory, Inc.	IC SRAM 16MBIT PARALLEL 48TFBGA	0
AS7C1024C-12JIN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	47
AS4C4M16SA-6TCNTR Alliance Memory, Inc.	IC DRAM 64MBIT PAR 54TSOP II	0
AS7C1024B-20JCN Alliance Memory, Inc.	IC SRAM 1MBIT PARALLEL 32SOJ	0
AS7C256A-20JCN Alliance Memory, Inc.	IC SRAM 256KBIT PARALLEL 28SOJ	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)