Memory

Part Number	Description / PDF	Quantity
GS882Z36CGD-300I GSI Technology	IC SRAM 9MBIT PARALLEL 165FPBGA	36
GS82582Q18GE-333I GSI Technology	IC SRAM 288MBIT PAR 165FPBGA	0
GS82582QT20GE-450I GSI Technology	IC SRAM 288MBIT PAR 165FPBGA	10
GS8256436GD-250I GSI Technology	IC SRAM 288MBIT PAR 165FPBGA	0
GS82582TT20GE-500I GSI Technology	IC SRAM 288MBIT PAR 165FPBGA	0
GS832018AGT-250I GSI Technology	IC SRAM 36MBIT PARALLEL 100TQFP	0
GS8182R36BGD-300I GSI Technology	IC SRAM 18MBIT PARALLEL 165FPBGA	0
GS81302Q36GE-300I GSI Technology	IC SRAM 144MBIT PAR 165FPBGA	0
GS8640Z18GT-250I GSI Technology	IC SRAM 72MBIT PARALLEL 100TQFP	0
GS880Z18CGT-333I GSI Technology	IC SRAM 9MBIT PARALLEL 100TQFP	36
GS840Z36CGT-250I GSI Technology	IC SRAM 4MBIT PARALLEL 100TQFP	29
GS832018AGT-333I GSI Technology	IC SRAM 36MBIT PARALLEL 100TQFP	18
GS8342Q18BGD-357I GSI Technology	IC SRAM 36MBIT PARALLEL 165FPBGA	18
GS82583ED18GK-625I GSI Technology	IC SRAM 288MBIT PARALLEL 260BGA	4
GS82564Z18GB-400I GSI Technology	IC SRAM 288MBIT PAR 119FPBGA	5
GS8182D37BGD-400I GSI Technology	IC SRAM 18MBIT PARALLEL 165FPBGA	0
GS8321Z36AGD-250I GSI Technology	IC SRAM 36MBIT PARALLEL 165FPBGA	0
GS8182Q36BGD-333I GSI Technology	IC SRAM 18MBIT PARALLEL 165FPBGA	36
GS8161Z36DGD-333I GSI Technology	IC SRAM 18MBIT PARALLEL 165FPBGA	36
GS82582QT19GE-400I GSI Technology	IC SRAM 288MBIT PAR 165FPBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)