Memory

Part Number	Description / PDF	Quantity
MB85RS64VYPNF-G-BCE1 Fujitsu Electronics America, Inc.	IC FRAM 64KBIT SPI 33MHZ 8SOP	0
MB85RC16PN-G-AMERE1 Fujitsu Electronics America, Inc.	IC FRAM 16KBIT I2C 1MHZ 8SON	0
MB85R256FPNF-G-JNERE2 Fujitsu Electronics America, Inc.	IC FRAM 256KBIT PARALLEL 28SOP	0
MB85RS256APNF-G-JNE1 Fujitsu Electronics America, Inc.	IC FRAM 256KBIT SPI 25MHZ 8SOP	0
MB85RS64TPNF-G-JNERE2 Fujitsu Electronics America, Inc.	IC FRAM 64KBIT SPI 10MHZ 8SOP	0
MB85RS2MTYPNF-G-AWE2 Fujitsu Electronics America, Inc.	IC FRAM 2MBIT SPI 50MHZ 8SOP	0
MB85RC128APNF-G-JNE1 Fujitsu Electronics America, Inc.	IC FRAM 128KBIT I2C 1MHZ 8SOP	948
MB85RC128APNF-G-JNERE1 Fujitsu Electronics America, Inc.	IC FRAM 128KBIT I2C 1MHZ 8SOP	0
MB85RC256VPNF-G-JNERE1 Fujitsu Electronics America, Inc.	IC FRAM 256KBIT I2C 1MHZ 8SOP	0
MB85RS64TUPN-G-AMEWE1 Fujitsu Electronics America, Inc.	IC FRAM 64KBIT SPI 10MHZ 8SON	828
MB85RS512TPNF-G-JNERE1 Fujitsu Electronics America, Inc.	IC FRAM 512KBIT SPI 30MHZ 8SOP	0
MB85R4001ANC-GE1 Fujitsu Electronics America, Inc.	IC FRAM 4MBIT PARALLEL 48TSOP	0
MB85RS128BPNF-G-JNERE1 Fujitsu Electronics America, Inc.	IC FRAM 128KBIT SPI 33MHZ 8SOP	0
MB85RQ4MLPF-G-BCERE1 Fujitsu Electronics America, Inc.	IC FRAM 4MBIT SPI/QUAD I/O 16SOP	2194
MB85RS128TYPNF-GS-BCERE1 Fujitsu Electronics America, Inc.	IC FRAM 128KBIT SPI 33MHZ 8SOP	2393
MB85RC16PNF-G-JNE1 Fujitsu Electronics America, Inc.	IC FRAM 16KBIT I2C 1MHZ 8SOP	0
MB85RS64PNF-G-JNE1 Fujitsu Electronics America, Inc.	IC FRAM 64KBIT SPI 20MHZ 8SOP	0
MB85RC64PNF-G-JNERE1 Fujitsu Electronics America, Inc.	IC FRAM 64KBIT I2C 400KHZ 8SOP	0
MB85RS2MLYPNF-G-AWE2 Fujitsu Electronics America, Inc.	IC FRAM 2MBIT SPI 50MHZ 8SOP	0
MB85RC04VPNF-G-JNERE1 Fujitsu Electronics America, Inc.	IC FRAM 4KBIT I2C 1MHZ 8SOP	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)