Memory

Part Number	Description / PDF	Quantity
MR0DL08BMA45 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 48FBGA	0
MR2A08AMYS35R Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 44TSOP2	0
MR2A08AMA35 Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 48FBGA	0
MR0A16ACYS35R Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 44TSOP2	0
MR3A16ACMA35R Everspin Technologies, Inc.	IC RAM 8MBIT PARALLEL 48FBGA	0
MR4A08BYS35 Everspin Technologies, Inc.	IC RAM 16MBIT PARALLEL 44TSOP2	425
MR256D08BMA45R Everspin Technologies, Inc.	IC RAM 256KBIT PARALLEL 48FBGA	0
MR5A16ACMA35R Everspin Technologies, Inc.	IC RAM 32MBIT PARALLEL 48FBGA	0
MR1A16AVYS35 Everspin Technologies, Inc.	IC RAM 2MBIT PARALLEL 44TSOP2	125
MR0A16AVYS35 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 44TSOP2	0
MR1A16ACYS35 Everspin Technologies, Inc.	IC RAM 2MBIT PARALLEL 44TSOP2	135
MR256A08BCMA35 Everspin Technologies, Inc.	IC RAM 256KBIT PARALLEL 48FBGA	48
MR25H10MDF Everspin Technologies, Inc.	IC RAM 1MBIT SPI 40MHZ 8DFN	1205
MR0A08BYS35 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 44TSOP2	499
MR4A08BCMA35 Everspin Technologies, Inc.	IC RAM 16MBIT PARALLEL 48FBGA	80
MR25H10CDFR Everspin Technologies, Inc.	IC RAM 1MBIT SPI 40MHZ 8DFN	0
MR4A16BCMA35 Everspin Technologies, Inc.	IC RAM 16MBIT PARALLEL 48FBGA	221
MR4A16BYS35R Everspin Technologies, Inc.	IC RAM 16MBIT PARALLEL 54TSOP2	0
MR0A16AMYS35 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 44TSOP2	0
MR2A08AYS35R Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 44TSOP2	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)