Memory

Part Number	Description / PDF	Quantity
MR25H256CDFR Everspin Technologies, Inc.	IC RAM 256KBIT SPI 40MHZ 8DFN	0
MR256D08BMA45 Everspin Technologies, Inc.	IC RAM 256KBIT PARALLEL 48FBGA	62
MR2A16ACMA35R Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 48FBGA	0
MR0A08BMA35 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 48FBGA	0
MR256DL08BMA45 Everspin Technologies, Inc.	IC RAM 256KBIT PARALLEL 48FBGA	0
MR25H256CDC Everspin Technologies, Inc.	IC RAM 256KBIT SPI 40MHZ 8DFN	4034
MR2A16AVYS35R Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 44TSOP2	0
MR0A16ACYS35 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 44TSOP2	523
MR25H256ACDF Everspin Technologies, Inc.	IC RAM 256KBIT SPI 40MHZ 8DFN	2154
MR1A16ACMA35R Everspin Technologies, Inc.	IC RAM 2MBIT PARALLEL 48FBGA	0
MR2A08AMA35R Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 48FBGA	0
MR4A16BCMA35R Everspin Technologies, Inc.	IC RAM 16MBIT PARALLEL 48FBGA	0
MR2A08AYS35 Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 44TSOP2	615
MR5A16AUYS45R Everspin Technologies, Inc.	IC RAM 32MBIT PARALLEL 54TSOP2	0
MR1A16AMYS35R Everspin Technologies, Inc.	IC RAM 2MBIT PARALLEL 44TSOP2	0
MR0A08BCYS35R Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 44TSOP2	0
MR0A16ACMA35 Everspin Technologies, Inc.	IC RAM 1MBIT PARALLEL 48FBGA	0
MR3A16AMA35R Everspin Technologies, Inc.	IC RAM 8MBIT PARALLEL 48FBGA	0
MR2A16AMYS35 Everspin Technologies, Inc.	IC RAM 4MBIT PARALLEL 44TSOP2	0
MR3A16AUYS45 Everspin Technologies, Inc.	IC RAM 8MBIT PARALLEL 54TSOP2	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)