Memory

Part Number	Description / PDF	Quantity
CY14B116S-BZ25XI Cypress Semiconductor	NO WARRANTY	326
CY7C1312KV18-300BZXCT Cypress Semiconductor	IC SRAM 18MBIT PARALLEL 165FBGA	0
S25FL128SAGMFV010 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 16SOIC	2806
S25FL256SDSMFBG03 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 16SOIC	0
S29GL128S90DHSS10 Cypress Semiconductor	IC FLASH 128MBIT PARALLEL 64FBGA	0
S25FL512SDPBHVC10 Cypress Semiconductor	IC FLASH 512MBIT SPI/QUAD 24BGA	0
CY14V116G7-BZ30XI Cypress Semiconductor	NO WARRANTY	26
CY62167G18-55ZXI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48TSOP I	0
S29GL01GT11TFIV20 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 56TSOP	0
CY62126EV30LL-45ZSXIT Cypress Semiconductor	IC SRAM 1MBIT PARALLEL 44TSOP II	8
S34MS01G104BHI010 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 63BGA	410
S25FL064LABNFN043 Cypress Semiconductor	IC FLASH 64MBIT SPI/QUAD 8USON	0
S25FL512SAGMFMR13 Cypress Semiconductor	IC FLASH 512MBIT SPI/QUAD 16SOIC	0
S29AL016J55TFNR20 Cypress Semiconductor	IC FLASH 16MBIT PARALLEL 48TSOP	0
S29GL064N90TFA033 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 48TSOP	0
CY7C1061GE-10BV1XI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0
CY62128EV30LL-45ZXI Cypress Semiconductor	IC SRAM 1MBIT PARALLEL 32TSOP I	0
S25FL256LDPBHV030 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 24BGA	0
S70FS01GSDSBHI210 Cypress Semiconductor	IC FLSH 1GBIT SPI/QUAD I/O 24BGA	0
S29GL512S10FHSS10 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 64BGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)