Memory

Part Number	Description / PDF	Quantity
S25FL256LAGMFI000 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 16SOIC	0
S25FL128SAGNFM000 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 8WSON	296
S25FL256SDPBHVC03 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 24BGA	0
FM24V01A-G Cypress Semiconductor	IC FRAM 128KBIT I2C 3.4MHZ 8SOIC	48
S29GL01GT10DHI020 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 64FBGA	0
S29GL064S80BHV040 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 48FBGA	0
FM28V020-TGTR Cypress Semiconductor	IC FRAM 256KBIT PAR 32TSOP I	0
CY7C1061G-10BVXIT Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0
S29GL032N11FFIV22 Cypress Semiconductor	IC FLASH 32MBIT PARALLEL 64FBGA	0
S26KL128SDABHA020 Cypress Semiconductor	IC FLASH 128MBIT PARALLEL 24FBGA	0
CY62167G30-55ZXET Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48TSOP I	0
S25FL164K0XMFB013 Cypress Semiconductor	IC FLASH 64MBIT SPI/QUAD 8SOIC	2690
CY62167GE-45ZXI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48TSOP I	0
S29GL01GT11FAIV13 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 64FBGA	0
CY62158EV30LL-45BVXIT Cypress Semiconductor	IC SRAM 8MBIT PARALLEL 48VFBGA	0
S29GL128S90FHSS43 Cypress Semiconductor	IC FLASH 128MBIT PARALLEL 64FBGA	0
CY7C1356CV25-166AXCT Cypress Semiconductor	IC SRAM 9MBIT PARALLEL 100TQFP	0
S25FL256SDSBHM210 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 24BGA	0
CY15E016Q-SXET Cypress Semiconductor	IC FRAM 16KBIT SPI 16MHZ 8SOIC	0
CY62146ELL-45ZSXI Cypress Semiconductor	IC SRAM 4MBIT PARALLEL 44TSOP II	660

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)