Memory

Part Number	Description / PDF	Quantity
CY14B108N-BA45XI Cypress Semiconductor	IC NVSRAM 8MBIT PARALLEL 48FBGA	195
S25FS128SAGNFI101 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 8WSON	0
CY62147GE18-55ZSXIT Cypress Semiconductor	IC SRAM 4MBIT PARALLEL 44TSOP II	0
CY62167G-45BVXIT Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	0
CY7C1354CV25-166AXCT Cypress Semiconductor	IC SRAM 9MBIT PARALLEL 100TQFP	0
S29AL008J55TFNR10 Cypress Semiconductor	IC FLASH 8MBIT PARALLEL 48TSOP I	504
CY7C1061GE18-15ZXI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48TSOP I	0
CY7C1011DV33-10BVXI Cypress Semiconductor	IC SRAM 2MBIT PARALLEL 48VFBGA	673
CY7C1345S-100AXCT Cypress Semiconductor	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
S29CD016J0MQAM113 Cypress Semiconductor	IC FLASH 16MBIT PARALLEL 80PQFP	0
S29AL016J70TFN010 Cypress Semiconductor	IC FLASH 16MBIT PARALLEL 48TSOP	0
CY7C10612GN30-10ZSXI Cypress Semiconductor	IC SRAM 16MBIT PAR 54TSOP II	0
CY14B116L-ZS25XI Cypress Semiconductor	IC NVSRAM 16MBIT PAR 44TSOP II	0
CY7C1020D-10ZSXI Cypress Semiconductor	IC SRAM 512KBIT PAR 44TSOP II	220
S25FL256LAGBHM030 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 24BGA	48
S29GL01GS11DHB013 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 64FBGA	0
CY7C1069G30-10BVXI Cypress Semiconductor	IC SRAM 16MBIT PARALLEL 48VFBGA	363
CY7C25652KV18-550BZXI Cypress Semiconductor	IC SRAM 72MBIT PARALLEL 165FBGA	0
S29GL032N90BAI040 Cypress Semiconductor	IC FLASH 32MBIT PARALLEL 48FBGA	0
CY14V104NA-BA25XIT Cypress Semiconductor	IC NVSRAM 4MBIT PARALLEL 48FBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)