Memory

Image Part Number Description / PDF Quantity Rfq
M95128-RMC6TG

M95128-RMC6TG

STMicroelectronics

IC EEPROM 128KBIT SPI 20MHZ 8MLP

3240

M24C04-DRDW3TP/K

M24C04-DRDW3TP/K

STMicroelectronics

IC EEPROM 4KBIT I2C 1MHZ 8TSSOP

7

M24C64-DFDW6TP

M24C64-DFDW6TP

STMicroelectronics

IC EEPROM 64KBIT I2C 1MHZ 8TSSOP

9

M95640-WMN6P

M95640-WMN6P

STMicroelectronics

IC EEPROM 64KBIT SPI 20MHZ 8SO

4115

M24C32-FDW6TP

M24C32-FDW6TP

STMicroelectronics

IC EEPROM 32KBIT I2C 1MHZ 8TSSOP

0

M24256-BWMN6P

M24256-BWMN6P

STMicroelectronics

IC EEPROM 256KBIT I2C 1MHZ 8SO

1525

M24C16-WDW6TP

M24C16-WDW6TP

STMicroelectronics

IC EEPROM 16KBIT I2C 8TSSOP

519

M24128S-FCU6T/T

M24128S-FCU6T/T

STMicroelectronics

IC EEPROM 128KBIT I2C 4WLCSP

0

M95M04-DRDW6TP

M95M04-DRDW6TP

STMicroelectronics

IC EEPROM 4MBIT SPI 10MHZ 8TSSOP

0

M24256-DFCS6TP/K

M24256-DFCS6TP/K

STMicroelectronics

IC EEPROM 256KBIT I2C 8WLCSP

273

M24512-DFCS6TP/K

M24512-DFCS6TP/K

STMicroelectronics

IC EEPROM 512KBIT I2C 8WLCSP

0

M95512-DFMN6TP

M95512-DFMN6TP

STMicroelectronics

IC EEPROM 512KBIT SPI 16MHZ 8SO

2821

M93C66-RDW3TP/K

M93C66-RDW3TP/K

STMicroelectronics

IC EEPROM 4KBIT SPI 2MHZ 8TSSOP

0

M95320-DRMN3TP/K

M95320-DRMN3TP/K

STMicroelectronics

IC EEPROM 32KBIT SPI 20MHZ 8SO

3557

M24C04-RMN6TP

M24C04-RMN6TP

STMicroelectronics

IC EEPROM 4KBIT I2C 400KHZ 8SO

3503

M95M01-DWMN3TP/K

M95M01-DWMN3TP/K

STMicroelectronics

IC EEPROM 1MBIT SPI 16MHZ 8SO

8831

M95M01-DFDW6TP

M95M01-DFDW6TP

STMicroelectronics

IC EEPROM 1MBIT SPI 16MHZ 8TSSOP

0

M95512-DFMC6TG

M95512-DFMC6TG

STMicroelectronics

IC EEPROM 512KBIT SPI 8UFDFPN

7

M24C64-RMN6P

M24C64-RMN6P

STMicroelectronics

IC EEPROM 64KBIT I2C 1MHZ 8SO

3926

M95M01-RDW6TP

M95M01-RDW6TP

STMicroelectronics

IC EEPROM 1MBIT SPI 16MHZ 8TSSOP

2339

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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