Memory

Part Number	Description / PDF	Quantity
LE25FU406CMA-TLM-H Sanyo Denki SanUPS Products	4M BIT (512K X 8) SERIAL FLASH M	7000
LE24L042CS-LV-TFM-E Sanyo Denki SanUPS Products	TWO WIRE SERIAL INTERFACE EEPROM	246500
LE24C322M-TLM-E Sanyo Denki SanUPS Products	IC EEPROM 32KBIT I2C 400KHZ 8MFP	0
LE25LB2562M-TLM-E Sanyo Denki SanUPS Products	256KBIT SERIAL SPI EEPROM	4000
LE24C082M-TLM-E Sanyo Denki SanUPS Products	IC EEPROM 8KBIT I2C 400KHZ 8MFP	0
LE24LB642CSTL-TFM-H Sanyo Denki SanUPS Products	TWO WIRE SERIAL INTERFACE EEPROM	680000
LE24C043M-TLM-E Sanyo Denki SanUPS Products	IC EEPROM 4KBIT I2C 400KHZ 8MFP	0
LE25FU406BMB-TLM-H Sanyo Denki SanUPS Products	4M BIT (512K X 8) SERIAL FLASH M	24000
LE25FW806TT-A-TLM-H-SY Sanyo Denki SanUPS Products	8M BIT(1M X 8) SERIAL FLASH MEMO	4000
LE25CB643M-TLM-E Sanyo Denki SanUPS Products	64 KB SPI CMOS SERIAL EEPROM	3000
LE25FW056CS-A-TRM-H Sanyo Denki SanUPS Products	512K BIT SERIAL FLASH MEMORY	336000
LE24CB642TT-TLM-H Sanyo Denki SanUPS Products	IC EEPROM 64KBIT I2C 8MSOP	2000
LE25FU206MA-TLM-H Sanyo Denki SanUPS Products	2M BIT (256KX8) SERIAL FLASH MEM	63000
LE25LB1282TT-TLM-E Sanyo Denki SanUPS Products	128KBIT SERIAL SPI EEPROM	24000
LE25FU206AMB-TLM-H-SA Sanyo Denki SanUPS Products	2M BIT (256KX8) SERIAL FLASH MEM	48000
LE25LB963CT-TE-L-H Sanyo Denki SanUPS Products	SERIAL SPI EEPROM	310000
LE24L322M-TLM-E Sanyo Denki SanUPS Products	32K, TWO WIRE SERIAL INTERFACE E	25000
LE24LA322CSLV2-TFM-E Sanyo Denki SanUPS Products	TWO WIRE SERIAL INTERFACE EEPROM	5000
LE25FS406MA-TLM-H Sanyo Denki SanUPS Products	4 M BIT (512 K X 8 ) SERIAL FLAS	29000
LE24L043CB-TL-TE-R-H Sanyo Denki SanUPS Products	TWO WIRE SERIAL INTERFACE EEPROM	440000

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)