Memory

Part Number	Description / PDF	Quantity
CY7C194-25VCT Rochester Electronics	STANDARD SRAM, 64KX4, 25NS, CMOS	7475
CY7C199L-15VC Rochester Electronics	STANDARD SRAM, 32KX8, 15NS	389
CY7C1357A-100AC Rochester Electronics	ZBT SRAM, 512KX18, 7.5NS	812
CY7C09279V-7AC Rochester Electronics	DUAL-PORT SRAM, 32KX16, 7.5NS	266
CY7C245A-35JC Rochester Electronics	OTP ROM, 2KX8, 25NS PQCC28	182
CY7C1021V33-15VCT Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	1500
CY7C141-55JCT Rochester Electronics	DUAL-PORT SRAM, 1KX8, 55NS	13394
CYD02S18V-133BBI Rochester Electronics	DUAL-PORT SRAM, 128KX18	45
CY7C1021BV33L-10ZXC Rochester Electronics	SRAM CHIP ASYNC SINGLE 3.3V 1M B	269
CY7C131-55NCT Rochester Electronics	DUAL-PORT SRAM, 1KX8	20190
CY62256VNLL-70ZIT Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	861
CY7C1011CV33-10ZCT Rochester Electronics	STANDARD SRAM, 128KX16	1000
CYD18S18V18-167BBAXC Rochester Electronics	DUAL-PORT SRAM, 1MX18, 4NS PBGA2	725
CY7C168A-15PC Rochester Electronics	STANDARD SRAM, 4KX4, 15NS, CMOS	608
CY7C1041BV33L-15ZC Rochester Electronics	STANDARD SRAM, 256KX16, 15NS	876
CY7C1614KV18-250BZC Rochester Electronics	QDR SRAM, 4MX36, CMOS, PBGA165	101
CY7C036AV-25AC Rochester Electronics	DUAL-PORT SRAM, 16KX18, 25NS	53
CY7C135-25JC Rochester Electronics	DUAL-PORT SRAM, 4KX8, 25NS	1043
CY7C008-15AC Rochester Electronics	DUAL-PORT SRAM, 64KX8, 15NS	17
CDP1824CD/B Rochester Electronics	CDP1824CD/B	189

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)