Memory

Part Number	Description / PDF	Quantity
70V639S12BCI8 Renesas Electronics America	IC SRAM 2.25MBIT PAR 256CABGA	0
71V35761SA166BGI8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
71T75902S75BG8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0
70V3389S5BF Renesas Electronics America	IC SRAM 1.125MBIT PAR 208CABGA	0
UPD44645184AF5-E50-FQ1 Renesas Electronics America	72-MB DDR II+ SRAM (2M X 36-BIT)	11
7024L20JGI8 Renesas Electronics America	IC SRAM 64KBIT PARALLEL 84PLCC	0
71024S20YG Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32SOJ	380
M5M51008DKV-55H#BT Renesas Electronics America	STANDARD SRAM, 128KX8	3444
71V67603S133BQ8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
71V124SA10YG8 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32SOJ	0
UPD44645182AF5-E40-FQ1-A Renesas Electronics America	QDR SRAM, 4MX18, 0.45NS	742
71T75602S133BG8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0
71V67803S133PFG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
70V3379S5BFI8 Renesas Electronics America	IC SRAM 576KBIT PAR 208CABGA	0
71V424S10YGI8 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 36SOJ	0
7133LA25JGI8 Renesas Electronics America	IC SRAM 32KBIT PARALLEL 68PLCC	0
71T75802S133BGI Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0
5962-8687505XA Renesas Electronics America	IC SRAM 8K PARALLEL SB48	0
70V08L15PFG8 Renesas Electronics America	IC SRAM 512KBIT PARALLEL 100TQFP	0
71T75602S100BGI Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)