Memory

Part Number	Description / PDF	Quantity
UPD46365364BF1-E40-EQ1-A Renesas Electronics America	QDR SRAM, 1MX36, 0.45NS	921
71V3556SA166BGG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
R1LP0408DSP-5SR#S0 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 32SOP	723
UPD44324182BF5-E40-FQ1 Renesas Electronics America	DDR SRAM, 2MX18, 0.45NS	240
71V424L12PHGI8 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 44TSOP II	0
71V547S80PFG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	3074
70T3339S166BF Renesas Electronics America	IC SRAM 9MBIT PARALLEL 208CABGA	0
71V67903S85BQ8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
7025L20PFGI Renesas Electronics America	IC SRAM 128KBIT PARALLEL 100TQFP	0
70V7319S133BF Renesas Electronics America	IC SRAM 4.5MBIT PAR 208CABGA	0
6116LA25SOGI8 Renesas Electronics America	IC SRAM 16KBIT PARALLEL 24SOIC	0
71V67603S133BGGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0
71V256SA12PZGI8 Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28TSOP	0
R1LV0416DSB-7LI#B0 Renesas Electronics America	STANDARD SRAM, 256KX16, 70NS	136
70V631S12BCI Renesas Electronics America	IC SRAM 4.5MBIT PAR 256CABGA	0
70V08L20PFI Renesas Electronics America	IC SRAM 512KBIT PARALLEL 100TQFP	1
71256L35YGI8 Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28SOJ	0
71V3556SA100BG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
UPD44325092BF5-E40-FQ1-A Renesas Electronics America	IC SRAM 36MBIT PARALLEL 165FBGA	445
71V67602S150BGG8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)