Memory

Part Number	Description / PDF	Quantity
71V35761S166BGGI Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
71421LA25PFGI8 Renesas Electronics America	IC SRAM 16KBIT PARALLEL 64TQFP	0
71V67603S166PFG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	1242
6116LA55DB Renesas Electronics America	IC SRAM 16KBIT PARALLEL 24CDIP	0
71V256SA12YG Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28SOJ	563
R1LV5256ESA-5SI#S1 Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28TSOP	586
71256SA15YGI8 Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28SOJ	4561
7132LA100PDG Renesas Electronics America	IC SRAM 16KBIT PARALLEL 48DIP	148
71V3579S85PFG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
71V546S133PFG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	10513
R1EX25004ASA00A#S0 Renesas Electronics America	IC EEPROM 4KBIT SPI 5MHZ 8SOP	17500
70V3379S5BF8 Renesas Electronics America	IC SRAM 576KBIT PAR 208CABGA	0
70V7319S200BC8 Renesas Electronics America	IC SRAM 4.5MBIT PAR 256CABGA	0
71321LA25PFGI Renesas Electronics America	IC SRAM 16KBIT PARALLEL 64TQFP	42
71V016SA10YG Renesas Electronics America	IC SRAM 1MBIT PARALLEL 44SOJ	272
71V65803S133BQI Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
71T75902S85BGG8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0
R1EX24004ATAS0A#S0 Renesas Electronics America	IC EEPROM 4KBIT I2C 8TSSOP	42000
70V7319S133BC Renesas Electronics America	IC SRAM 4.5MBIT PAR 256CABGA	0
UPD46184182BF1-E33Y-EQ1-A Renesas Electronics America	DDR SRAM, 1MX18, 0.45NS	1012

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)