Memory

Part Number	Description / PDF	Quantity
71V256SA12PZG Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28TSOP	4926
71T75802S166PFGI8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 100TQFP	0
70V3569S4BC Renesas Electronics America	IC SRAM 576KBIT PAR 256CABGA	0
70T633S10BC8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 256CABGA	0
R1LV0408DSB-7LR#B0 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 32TSOP II	72
UPD44325362BF5-E33-FQ1-A Renesas Electronics America	QDR SRAM, 1MX36, 0.45NS	11965
70V3579S5BFI Renesas Electronics America	IC SRAM 1.125MBIT PAR 208CABGA	0
R1QDA7218ABB-20IB0 Renesas Electronics America	STANDARD SRAM, 4MX18, 0.45NS	690
R1LV0408DSB-7LR#S0 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 32TSOP II	546
71V65703S85PFGI Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
R1LP0408DSB-5SI#B1 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 32TSOP II	1564
R1LV0816ASB-7SI#B0 Renesas Electronics America	IC SRAM 8MBIT PARALLEL 44TSOP II	1778
UPD44645362AF5-E50-FQ1-A Renesas Electronics America	STANDARD SRAM, 2MX36, 0.45NS	486
70V3389S4BC Renesas Electronics America	IC SRAM 1.125MBIT PAR 256CABGA	0
70T3509MS133BP Renesas Electronics America	IC SRAM 36MBIT PARALLEL 256CABGA	0
7130LA35C Renesas Electronics America	IC SRAM 8KBIT PARALLEL SB48	0
71V546S100PFGI Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
RMWV6416AGSD-5S2#AA0 Renesas Electronics America	IC SRAM 64MBIT PAR 52TSOP II	195
RMLV1616AGBG-5S2#AC0 Renesas Electronics America	IC SRAM 16MBIT PARALLEL 48TFBGA	577
70T659S12BFI Renesas Electronics America	IC SRAM 4.5MBIT PAR 208CABGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)