Memory

Part Number	Description / PDF	Quantity
7164L25TDB Renesas Electronics America	IC SRAM 64KBIT PARALLEL 28CDIP	0
71V65603S150BQI Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
71V016SA12BFGI Renesas Electronics America	IC SRAM 1MBIT PARALLEL 48FBGA	3924
HN27C101AG12 Renesas Electronics America	UV EPROM, 128KX8, 100NS	234
71V016SA20PHGI Renesas Electronics America	IC SRAM 1MBIT PARALLEL 44TSOP II	249
71256SA12PZG Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28TSOP	3093
70V631S12BF Renesas Electronics America	IC SRAM 4.5MBIT PAR 208CABGA	0
71016S12PHG8 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 44TSOP II	74
R1LV3216RSA-7SR#B0 Renesas Electronics America	IC SRAM 32MBIT PARALLEL 48TSOP I	2329
UPD44165182BF5-E33-EQ3 Renesas Electronics America	QDR SRAM, 1MX18, 0.45NS	140
71V25761S166PFGI8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
UPD46185182BF1-E40Y-EQ1 Renesas Electronics America	QDR SRAM, 1MX18, 0.45NS	2451
71V424L15PHG Renesas Electronics America	IC SRAM 4MBIT PARALLEL 44TSOP II	30
71V65603S133BQG8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
RMLV0416EGSB-4S2#HA0 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 44TSOP2	2000
71T75802S100BGI8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0
71V016SA15BF Renesas Electronics America	IC SRAM 1MBIT PARALLEL 48CABGA	783
70T3539MS133BCI8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 256CABGA	0
UPD43256BGU-70LL-E2-A Renesas Electronics America	STANDARD SRAM, 32KX8, 70NS	8445
71V67603S133BQI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)