Transistors - JFETs

Part Number	Description / PDF	Quantity
NTE2938 NTE Electronics, Inc.	JFET P-CHANNEL 30V TO-92	715
NTE457 NTE Electronics, Inc.	JFET-N-CH GEN PURP AMP/SW	421
NTE326 NTE Electronics, Inc.	JFET-P-CH GEN PURP AF AMP	584
NTE466 NTE Electronics, Inc.	JFET-N-CH CHOPPER/SW	132
NTE451 NTE Electronics, Inc.	JFET-N-CH UHF/VHF AMP	3175
2N4221A NTE Electronics, Inc.	T-JFET N CHANNEL	40
NTE468 NTE Electronics, Inc.	JFET-N-CHANNEL SWITCH TO-92	268
NTE133 NTE Electronics, Inc.	FET-AF AMP SWITCH	121
NTE312 NTE Electronics, Inc.	JFET-N-CH VHF AMP/MIX	211
NTE460 NTE Electronics, Inc.	JFET-P-CH AF AMP	456
NTE459 NTE Electronics, Inc.	JFET-N-CH AF AMP/CHOP./SW	286
2N5460 NTE Electronics, Inc.	T-JFET P CHANNEL	910
NTE489 NTE Electronics, Inc.	JFET-P CHAN GEN PURP AMP	32
NTE2910 NTE Electronics, Inc.	JFET N CHANNEL SWITCH	291
NTE461 NTE Electronics, Inc.	JFET-MATCHED DUAL N-CH	364
NTE469 NTE Electronics, Inc.	JFET-N-CHANNEL SWITCH	56
NTE452 NTE Electronics, Inc.	JFET-N-CH UHF/VHF AMP	4
NTE2937 NTE Electronics, Inc.	JFET P-CHANNEL 30V TO-92	1953
NTE467 NTE Electronics, Inc.	JFET-N-CH CHOPPER/FAST SW	152
PN4393 NTE Electronics, Inc.	T-JFET- N CHANNEL	320

Transistors - JFETs

1. Overview

Junction Field-Effect Transistors (JFETs) are three-terminal voltage-controlled semiconductor devices that regulate current flow through a conductive channel. As the first type of field-effect transistor, JFETs are characterized by high input impedance, low noise, and excellent analog signal handling capabilities. They play critical roles in modern electronics for signal amplification, switching, and impedance matching applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
N-channel JFET	Higher electron mobility, faster operation	Audio amplifiers, RF mixers
P-channel JFET	Complementary to N-channel, lower speed	Power switching, analog switches
Dual-gate JFET	Two control gates for improved linearity	TV tuners, communication systems
High-frequency JFET	Optimized for GHz-range performance	RF amplifiers, microwave circuits

3. Structure and Composition

JFETs consist of a semiconductor channel (typically silicon or GaAs) with source and drain contacts at each end. A reverse-biased p-n junction gate controls the channel width. Key structural elements include: - Channel: Determines current capacity and transconductance - Gate: Forms depletion region to modulate channel conductivity - Metallization layers: Provide low-resistance contacts - Passivation layer: Protects device surface from contamination

4. Key Technical Specifications

Parameter	Description	Importance
V_GS(off)	Gate-source cutoff voltage	Determines operating voltage range
I_DSS	Saturation drain current	Defines maximum current capability
g_m	Transconductance	Measures amplification efficiency
R_DS(on)	On-state resistance	Impacts power dissipation
f_T	Transition frequency	Limits high-frequency performance

5. Application Fields

Major industries utilizing JFETs include: - Audio equipment: Guitar amplifiers, microphone preamps - Test & measurement: Oscilloscopes, signal analyzers - Industrial control: Sensor interfaces, process control - Medical devices: ECG machines, diagnostic equipment - Communication systems: RF front-ends, satellite receivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
TI (Texas Instruments)	J111	General-purpose N-channel JFET
ON Semiconductor	2N5457	High-voltage switching applications
Infineon Technologies	BF862	Low-noise RF amplifier JFET
STMicroelectronics	STJ105	Power JFET for industrial systems

7. Selection Guidelines

Consider the following factors when selecting JFETs: - Application type: Audio (low noise), switching (high I_DSS), or RF (high f_T) - Operating conditions: Temperature range, voltage requirements - Package type: Through-hole for prototyping vs. surface-mount for mass production - Cost vs performance: Balance between specifications and budget constraints

8. Industry Trends

Emerging trends shaping JFET development include: - Development of wide-bandgap JFETs using SiC/GaN for high-power applications - Integration with CMOS technology for mixed-signal systems - Miniaturization for portable electronics - Enhanced radiation-hardened variants for aerospace applications - Growing adoption in bio-sensing and IoT edge devices