Transistors - JFETs

Image Part Number Description / PDF Quantity Rfq
JANTX2N4091

JANTX2N4091

Microsemi

JFET N-CH 40V 360MW TO-18

115

JANTX2N4859

JANTX2N4859

Microsemi

JFET N-CH 30V 360MW TO-18

1209

JANTX2N4093UB

JANTX2N4093UB

Microsemi

JFET N-CH 40V 0.36W SMD

118

JANTX2N4092UB

JANTX2N4092UB

Microsemi

JFET N-CH 40V 0.36W SMD

122

JANTX2N4416AUB

JANTX2N4416AUB

Microsemi

JFET N-CH 35V 0.3W 4SMD

5

JANTX2N4857

JANTX2N4857

Microsemi

JFET N-CH 40V 360MW TO-18

0

Transistors - JFETs

1. Overview

Junction Field-Effect Transistors (JFETs) are three-terminal voltage-controlled semiconductor devices that regulate current flow through a conductive channel. As the first type of field-effect transistor, JFETs are characterized by high input impedance, low noise, and excellent analog signal handling capabilities. They play critical roles in modern electronics for signal amplification, switching, and impedance matching applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
N-channel JFETHigher electron mobility, faster operationAudio amplifiers, RF mixers
P-channel JFETComplementary to N-channel, lower speedPower switching, analog switches
Dual-gate JFETTwo control gates for improved linearityTV tuners, communication systems
High-frequency JFETOptimized for GHz-range performanceRF amplifiers, microwave circuits

3. Structure and Composition

JFETs consist of a semiconductor channel (typically silicon or GaAs) with source and drain contacts at each end. A reverse-biased p-n junction gate controls the channel width. Key structural elements include: - Channel: Determines current capacity and transconductance - Gate: Forms depletion region to modulate channel conductivity - Metallization layers: Provide low-resistance contacts - Passivation layer: Protects device surface from contamination

4. Key Technical Specifications

ParameterDescriptionImportance
VGS(off)Gate-source cutoff voltageDetermines operating voltage range
IDSSSaturation drain currentDefines maximum current capability
gmTransconductanceMeasures amplification efficiency
RDS(on)On-state resistanceImpacts power dissipation
fTTransition frequencyLimits high-frequency performance

5. Application Fields

Major industries utilizing JFETs include: - Audio equipment: Guitar amplifiers, microphone preamps - Test & measurement: Oscilloscopes, signal analyzers - Industrial control: Sensor interfaces, process control - Medical devices: ECG machines, diagnostic equipment - Communication systems: RF front-ends, satellite receivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
TI (Texas Instruments)J111General-purpose N-channel JFET
ON Semiconductor2N5457High-voltage switching applications
Infineon TechnologiesBF862Low-noise RF amplifier JFET
STMicroelectronicsSTJ105Power JFET for industrial systems

7. Selection Guidelines

Consider the following factors when selecting JFETs: - Application type: Audio (low noise), switching (high IDSS), or RF (high fT) - Operating conditions: Temperature range, voltage requirements - Package type: Through-hole for prototyping vs. surface-mount for mass production - Cost vs performance: Balance between specifications and budget constraints

8. Industry Trends

Emerging trends shaping JFET development include: - Development of wide-bandgap JFETs using SiC/GaN for high-power applications - Integration with CMOS technology for mixed-signal systems - Miniaturization for portable electronics - Enhanced radiation-hardened variants for aerospace applications - Growing adoption in bio-sensing and IoT edge devices

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