Transistors - JFETs

Image	Part Number	Description / PDF	Quantity	Rfq
	2N5116JTXL02 Vishay / Siliconix	JFET P-CH 30V TO-18	0
	2N5116JTX02 Vishay / Siliconix	JFET P-CH 30V TO-18	0
	2N5116JTVL02 Vishay / Siliconix	JFET P-CH 30V TO-18	0
	2N5116 Vishay / Siliconix	JFET P-CH 30V TO-18	0
	2N4416-E3 Vishay / Siliconix	JFET N-CH 30V 0.3W TO-206AF	0
	2N4117A-2 Vishay / Siliconix	MOSFET N-CH 40V 30UA TO-206AF	0
	2N4119A-E3 Vishay / Siliconix	MOSFET N-CH 40V 200UA TO-206AF	0
	SST4118-T1-E3 Vishay / Siliconix	JFET N-CH 70V 80UA SOT-23	0
	SST174-E3 Vishay / Siliconix	JFET N-CH 30V 20MA SOT-23	0
	2N4416A Vishay / Siliconix	MOSFET N-CH 35V 5MA TO-206AF	0
	2N4118A-2 Vishay / Siliconix	MOSFET N-CH 40V 80UA TO-206AF	0
	SST5462-T1-E3 Vishay / Siliconix	JFET P-CH 55V 4MA SOT-23	0
	SST201-T1-E3 Vishay / Siliconix	JFET N-CH 25V .7MA SOT-23	0
	2N4416A-2 Vishay / Siliconix	MOSFET N-CH 35V 5MA TO-206AF	0
	2N4416A-E3 Vishay / Siliconix	MOSFET N-CH 35V 5MA TO-206AF	0
	SST4416-T1-E3 Vishay / Siliconix	JFET N-CH 36V 5MA SOT-23	0
	SST204-T1-E3 Vishay / Siliconix	JFET N-CH 25V 0.35W SOT-23	0
	2N4118A-E3 Vishay / Siliconix	MOSFET N-CH 40V 80UA TO-206AF	0
	SST4416-E3 Vishay / Siliconix	JFET N-CH 36V 5MA SOT-23	0
	SST5484-E3 Vishay / Siliconix	JFET P-CH 35V 1MA SOT-23	0

Transistors - JFETs

1. Overview

Junction Field-Effect Transistors (JFETs) are three-terminal voltage-controlled semiconductor devices that regulate current flow through a conductive channel. As the first type of field-effect transistor, JFETs are characterized by high input impedance, low noise, and excellent analog signal handling capabilities. They play critical roles in modern electronics for signal amplification, switching, and impedance matching applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
N-channel JFET	Higher electron mobility, faster operation	Audio amplifiers, RF mixers
P-channel JFET	Complementary to N-channel, lower speed	Power switching, analog switches
Dual-gate JFET	Two control gates for improved linearity	TV tuners, communication systems
High-frequency JFET	Optimized for GHz-range performance	RF amplifiers, microwave circuits

3. Structure and Composition

JFETs consist of a semiconductor channel (typically silicon or GaAs) with source and drain contacts at each end. A reverse-biased p-n junction gate controls the channel width. Key structural elements include: - Channel: Determines current capacity and transconductance - Gate: Forms depletion region to modulate channel conductivity - Metallization layers: Provide low-resistance contacts - Passivation layer: Protects device surface from contamination

4. Key Technical Specifications

Parameter	Description	Importance
V_GS(off)	Gate-source cutoff voltage	Determines operating voltage range
I_DSS	Saturation drain current	Defines maximum current capability
g_m	Transconductance	Measures amplification efficiency
R_DS(on)	On-state resistance	Impacts power dissipation
f_T	Transition frequency	Limits high-frequency performance

5. Application Fields

Major industries utilizing JFETs include: - Audio equipment: Guitar amplifiers, microphone preamps - Test & measurement: Oscilloscopes, signal analyzers - Industrial control: Sensor interfaces, process control - Medical devices: ECG machines, diagnostic equipment - Communication systems: RF front-ends, satellite receivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
TI (Texas Instruments)	J111	General-purpose N-channel JFET
ON Semiconductor	2N5457	High-voltage switching applications
Infineon Technologies	BF862	Low-noise RF amplifier JFET
STMicroelectronics	STJ105	Power JFET for industrial systems

7. Selection Guidelines

Consider the following factors when selecting JFETs: - Application type: Audio (low noise), switching (high I_DSS), or RF (high f_T) - Operating conditions: Temperature range, voltage requirements - Package type: Through-hole for prototyping vs. surface-mount for mass production - Cost vs performance: Balance between specifications and budget constraints

8. Industry Trends

Emerging trends shaping JFET development include: - Development of wide-bandgap JFETs using SiC/GaN for high-power applications - Integration with CMOS technology for mixed-signal systems - Miniaturization for portable electronics - Enhanced radiation-hardened variants for aerospace applications - Growing adoption in bio-sensing and IoT edge devices