Transistors - IGBTs

Transistors - IGBTs - Single

Part Number	Description / PDF	Quantity
AOD5B65N1 Alpha and Omega Semiconductor, Inc.	IGBT 650V 5A TO252	0
AOK50B65M2 Alpha and Omega Semiconductor, Inc.	IGBT 650V 50A TO247	184
AOB10B65M1 Alpha and Omega Semiconductor, Inc.	IGBT 650V 10A TO263	0
AOB5B60D Alpha and Omega Semiconductor, Inc.	IGBT 600V 10A 82.4W TO263	0
AOK30B65M2 Alpha and Omega Semiconductor, Inc.	IGBT 650V 30A TO247	160
AOK60B60D1 Alpha and Omega Semiconductor, Inc.	IGBT 600V 120A 417W TO247	0
AOK40B65H2AL Alpha and Omega Semiconductor, Inc.	IGBT 650V 40A TO-247	0
AOB15B60D Alpha and Omega Semiconductor, Inc.	IGBT 600V 30A 167W TO263	0
AOTF10B65M2 Alpha and Omega Semiconductor, Inc.	IGBT 650V 10A TO220	363
AOTF15B60D Alpha and Omega Semiconductor, Inc.	IGBT 600V 30A 50W TO220F	0
AOK20B65M1 Alpha and Omega Semiconductor, Inc.	IGBT 650V 20A TO-247	0
AOK20B120E1 Alpha and Omega Semiconductor, Inc.	IGBT 1200V 20A TO247	0
AOTF15B65M2 Alpha and Omega Semiconductor, Inc.	IGBT 650V 15A TO220	790
AOTF15B65M1 Alpha and Omega Semiconductor, Inc.	IGBT 650V 15A TO220	0
AOK40B120M1 Alpha and Omega Semiconductor, Inc.	IGBT 1200V 40A TO-247	0
AOTF5B60D Alpha and Omega Semiconductor, Inc.	IGBT 600V 10A 31.2W TO220F	0
AOK30B60D1 Alpha and Omega Semiconductor, Inc.	IGBT 600V 60A 208W TO247	0
AOT5B65M1 Alpha and Omega Semiconductor, Inc.	IGBT 650V 5A TO220	875
AOT10B60D Alpha and Omega Semiconductor, Inc.	IGBT 600V 20A 163W TO220	59
AOD5B60D Alpha and Omega Semiconductor, Inc.	IGBT 600V 10A 54.4W TO252	0

Transistors - IGBTs - Single

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) are three-terminal power semiconductor devices that combine the high-input impedance of a MOSFET with the low conduction loss of a bipolar transistor. They are critical components in modern power electronics systems, enabling efficient switching and amplification in high-voltage (600V 6500V) and high-current applications. IGBTs are widely used in electric vehicles, industrial motor drives, renewable energy systems, and consumer electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Non-Punch-Through (NPT)	High short-circuit withstand capability, temperature-stable performance	Industrial motor drives, welding equipment
Punch-Through (PT)	Lower conduction losses, optimized for 600V 1700V ranges	Solar inverters, uninterruptible power supplies (UPS)
Field-Stop (FS)	Reduced tail current, improved switching performance	Electric vehicle chargers, rail traction systems

3. Structure and Composition

A single IGBT typically consists of a four-layer semiconductor structure (P-N-P-N) with three electrodes: collector, gate, and emitter. The gate is isolated by a thin oxide layer, enabling voltage-controlled operation. Key components include:

Silicon die with doped regions forming the bipolar transistor structure
Polysilicon gate electrode with insulation layer
Metal layers for source/drain contacts
Thermal interface materials (e.g., solder die attach)

Common package types: TO-247, D2PAK, SOT-227, and direct copper bonding (DCB) modules.

4. Key Technical Specifications

Parameter	Typical Range	Test Conditions	Importance
Collector Current (IC)	10A 300A	T_C=25 C	Determines power handling capability
Collector-Emitter Voltage (V_CE)	600V 1700V	I_C=rated current	Defines voltage class
Forward Voltage Drop (V_{CE_sat})	1.5V 3.5V	I_C=rated, T_J=125 C	Impacts conduction losses
Switching Losses (E_on/E_off)	1mJ 100mJ	Resistive load, 150 C	Limits maximum operating frequency
Short-Circuit Withstand Time	1 s 10 s	V_CE=rated, I_C=2 rated	System reliability indicator

5. Application Areas

Power Electronics: Variable-frequency drives, uninterruptible power supplies (UPS)
Renewable Energy: Solar inverters, wind turbine converters
Automotive: Onboard chargers, battery management systems
Consumer Electronics: Induction cookers, plasma TVs
Rail Transport: Traction inverters, regenerative braking systems

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Infineon Technologies	IGW40N120H3	1200V, 40A, FS technology
Mitsubishi Electric	CM200DY-12H	1200V, 200A, industrial grade
ON Semiconductor	FGA30N120ANTD	1200V, 30A, soft recovery diode integrated
STMicroelectronics	STGF100N650DT	650V, 100A, automotive qualified
Toshiba Electronic Devices	GT20NC140SRA	1400V, 20A, high short-circuit robustness

7. Selection Recommendations

Key factors to consider:

Voltage/Current Ratings: Select V_CE 1.2 system max voltage
Switching Frequency: High-frequency applications require low E_on/E_off
Thermal Management: Check R_th junction-to-case compatibility
Short-Circuit Requirements: Critical for motor drives and traction systems
Package Type: Through-hole vs. surface-mount based on assembly process

Example: For a 1500V PV inverter, select a PT-type IGBT with V_CE 1700V and E_off < 5mJ.

8. Industry Trends

Future developments include:

Adoption of wide-bandgap materials (SiC/IGBT hybrid devices)
Advanced packaging (double-sided cooling, silver sintering)
Integration with gate drivers (smart power modules)
Increased operating temperature capability (up to 175 C)
AI-driven reliability prediction models for lifetime optimization