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Transistors - IGBTs - Single

Image Part Number Description / PDF Quantity Rfq
TIG064E8-TL-H

TIG064E8-TL-H

Sanyo Denki SanUPS Products

N-CHANNEL IGBT FOR LIGHT-CONTROL

45000

Transistors - IGBTs - Single

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) are three-terminal power semiconductor devices that combine the high-input impedance of a MOSFET with the low conduction loss of a bipolar transistor. They are critical components in modern power electronics systems, enabling efficient switching and amplification in high-voltage (600V 6500V) and high-current applications. IGBTs are widely used in electric vehicles, industrial motor drives, renewable energy systems, and consumer electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Non-Punch-Through (NPT)High short-circuit withstand capability, temperature-stable performanceIndustrial motor drives, welding equipment
Punch-Through (PT)Lower conduction losses, optimized for 600V 1700V rangesSolar inverters, uninterruptible power supplies (UPS)
Field-Stop (FS)Reduced tail current, improved switching performanceElectric vehicle chargers, rail traction systems

3. Structure and Composition

A single IGBT typically consists of a four-layer semiconductor structure (P-N-P-N) with three electrodes: collector, gate, and emitter. The gate is isolated by a thin oxide layer, enabling voltage-controlled operation. Key components include:

  • Silicon die with doped regions forming the bipolar transistor structure
  • Polysilicon gate electrode with insulation layer
  • Metal layers for source/drain contacts
  • Thermal interface materials (e.g., solder die attach)

Common package types: TO-247, D2PAK, SOT-227, and direct copper bonding (DCB) modules.

4. Key Technical Specifications

ParameterTypical RangeTest ConditionsImportance
Collector Current (IC)10A 300ATC=25 CDetermines power handling capability
Collector-Emitter Voltage (VCE)600V 1700VIC=rated currentDefines voltage class
Forward Voltage Drop (VCE_sat)1.5V 3.5VIC=rated, TJ=125 CImpacts conduction losses
Switching Losses (Eon/Eoff)1mJ 100mJResistive load, 150 CLimits maximum operating frequency
Short-Circuit Withstand Time1 s 10 sVCE=rated, IC=2 ratedSystem reliability indicator

5. Application Areas

  • Power Electronics: Variable-frequency drives, uninterruptible power supplies (UPS)
  • Renewable Energy: Solar inverters, wind turbine converters
  • Automotive: Onboard chargers, battery management systems
  • Consumer Electronics: Induction cookers, plasma TVs
  • Rail Transport: Traction inverters, regenerative braking systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Infineon TechnologiesIGW40N120H31200V, 40A, FS technology
Mitsubishi ElectricCM200DY-12H1200V, 200A, industrial grade
ON SemiconductorFGA30N120ANTD1200V, 30A, soft recovery diode integrated
STMicroelectronicsSTGF100N650DT650V, 100A, automotive qualified
Toshiba Electronic DevicesGT20NC140SRA1400V, 20A, high short-circuit robustness

7. Selection Recommendations

Key factors to consider:

  • Voltage/Current Ratings: Select VCE 1.2 system max voltage
  • Switching Frequency: High-frequency applications require low Eon/Eoff
  • Thermal Management: Check Rth junction-to-case compatibility
  • Short-Circuit Requirements: Critical for motor drives and traction systems
  • Package Type: Through-hole vs. surface-mount based on assembly process

Example: For a 1500V PV inverter, select a PT-type IGBT with VCE 1700V and Eoff < 5mJ.

8. Industry Trends

Future developments include:

  • Adoption of wide-bandgap materials (SiC/IGBT hybrid devices)
  • Advanced packaging (double-sided cooling, silver sintering)
  • Integration with gate drivers (smart power modules)
  • Increased operating temperature capability (up to 175 C)
  • AI-driven reliability prediction models for lifetime optimization
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