Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FMG2G50US120

FMG2G50US120

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 1200V 50A 320W 7PMGA

0

FTOO3V43A1

FTOO3V43A1

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE PWR 3-PHASE

0

FMS6G10US60S

FMS6G10US60S

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 600V 10A 66W 25PMAA

0

NXH350N100H4Q2F2PG

NXH350N100H4Q2F2PG

Sanyo Semiconductor/ON Semiconductor

IC MODULE PIM 350A 1000V

0

NXH80T120L2Q0S2TG

NXH80T120L2Q0S2TG

Sanyo Semiconductor/ON Semiconductor

MODULE PIM 1200V 80A

0

FMS7G15US60S

FMS7G15US60S

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 600V 15A 73W 25PMAA

0

FMS6G15US60S

FMS6G15US60S

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 600V 15A 73W 25PMAA

0

NXH80T120L2Q0SG

NXH80T120L2Q0SG

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 1200V 65A 146W PIM20

0

NXH350N100H4Q2F2S1G

NXH350N100H4Q2F2S1G

Sanyo Semiconductor/ON Semiconductor

IC PWR MODULE 1000V 350A PIM42

0

FMS7G10US60

FMS7G10US60

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 600V 10A 66W 25PMAA

0

FMS7G10US60S

FMS7G10US60S

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 600V 10A 66W 25PMAA

0

FMS6G15US60

FMS6G15US60

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 600V 15A 73W 25PMAA

0

NXH350N100H4Q2F2SG

NXH350N100H4Q2F2SG

Sanyo Semiconductor/ON Semiconductor

IC MODULE PIM 350A 1000V

0

HGT1N40N60A4D

HGT1N40N60A4D

Sanyo Semiconductor/ON Semiconductor

IGBT MOD 600V 110A 298W SOT227B

0

F59314548D

F59314548D

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE POWER IPM

0

SNXH100M95H3Q2F2PG

SNXH100M95H3Q2F2PG

Sanyo Semiconductor/ON Semiconductor

IC MODULE PIM 100V

0

SNXH80T120L2Q0P2G

SNXH80T120L2Q0P2G

Sanyo Semiconductor/ON Semiconductor

IC MODULE PIM 1200V 80A

0

NXH027B120MNF2PTG

NXH027B120MNF2PTG

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 1200V

0

FMS6G20US60S

FMS6G20US60S

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 600V 20A 89W 25PMAA

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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