Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGT150DA120D1G

APTGT150DA120D1G

Microsemi

IGBT MODULE 1200V 220A 700W D1

0

APTGF50TA120PG

APTGF50TA120PG

Microsemi

IGBT MODULE 1200V 75A 312W SP6P

0

APTGT300DA120D3G

APTGT300DA120D3G

Microsemi

IGBT MODULE 1200V 440A 1250W D3

0

APTGT300SK120D3G

APTGT300SK120D3G

Microsemi

IGBT MODULE 1200V 440A 1250W D3

0

APTGF200DA120D3G

APTGF200DA120D3G

Microsemi

IGBT MODULE 1200V 300A 1400W D3

0

APTGT100SK60TG

APTGT100SK60TG

Microsemi

IGBT MODULE 600V 150A 340W SP4

0

APTGT30A60T1G

APTGT30A60T1G

Microsemi

IGBT MODULE 600V 50A 90W SP1

0

APTGF75DH120TG

APTGF75DH120TG

Microsemi

IGBT MODULE 1200V 100A 500W SP4

0

APTGT30A170D1G

APTGT30A170D1G

Microsemi

IGBT MODULE 1700V 45A 210W D1

0

APTGT400DA120D3G

APTGT400DA120D3G

Microsemi

IGBT MODULE 1200V 580A 2100W D3

0

APTGT200SK120D3G

APTGT200SK120D3G

Microsemi

IGBT MODULE 1200V 300A 1050W D3

0

APTGT25H120T1G

APTGT25H120T1G

Microsemi

IGBT MODULE 1200V 40A 156W SP1

0

APTGT50TA170PG

APTGT50TA170PG

Microsemi

IGBT MODULE 1700V 70A 310W SP6P

0

APTGT150A60TG

APTGT150A60TG

Microsemi

IGBT MODULE 600V 225A 480W SP4

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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