Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
APT30GP60JDQ1 Microsemi	IGBT MODULE 600V 67A 245W ISOTOP	0
APTGL180A1202G Microsemi	IGBT MODULE 1200V 220A 750W SP2	2
APTGT150H170G Microsemi	IGBT MODULE 1700V 250A 890W SP6	0
APTGT225DA170G Microsemi	IGBT MODULE 1700V 340A 1250W SP6	0
APTGF100A1202G Microsemi	IGBT MODULE 1200V 135A 568W SP2	0
APT50GF60JCU2 Microsemi	IGBT MODULE 600V 70A 277W SOT227	0
APTGF90DU60TG Microsemi	IGBT MODULE 600V 110A 416W SP4	0
APTGF350DU60G Microsemi	IGBT MODULE 600V 430A 1562W SP6	0
APT200GN60JG Microsemi	IGBT MOD 600V 283A 682W ISOTOP	0
APT200GN60JDQ4G Microsemi	IGBT MOD 600V 283A 682W ISOTOP	0
APTGV50H120T3G Microsemi	IGBT MODULE 1200V 75A 270W SP3	0
APTGFQ25H120T2G Microsemi	IGBT MODULE 1200V 40A 227W SP2	0
APTGT100A120D1G Microsemi	IGBT MODULE 1200V 150A 520W D1	0
APTGT75H60T2G Microsemi	IGBT MODULE 600V 100A 250W SP2	0
APTGF100A120T3AG Microsemi	IGBT MODULE 1200V 130A 780W SP3	0
APTGF180DH60G Microsemi	IGBT MODULE 600V 220A 833W SP6	0
APT25GF120JCU2 Microsemi	IGBT MOD 1200V 45A 227W SOT227	0
APTGF300A120D3G Microsemi	IGBT MODULE 1200V 420A 2100W D3	0
APTGF50X60T3G Microsemi	IGBT MODULE 600V 65A 250W SP3	0
APTGF50DDA120T3G Microsemi	IGBT MODULE 1200V 70A 312W SP3	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability