Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
MKI50-12F7

MKI50-12F7

Wickmann / Littelfuse

IGBT MODULE 1200V 65A 350W E2

6

MG17450WB-BN4MM

MG17450WB-BN4MM

Wickmann / Littelfuse

IGBT MODULE 1700V 600A 2250W WB

0

MIXA40W1200TED

MIXA40W1200TED

Wickmann / Littelfuse

IGBT MODULE 1200V 60A 195W E2

0

MIXG120W1200PTEH

MIXG120W1200PTEH

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E3-PACK-PF

0

MWI50-06A7

MWI50-06A7

Wickmann / Littelfuse

IGBT MODULE 600V 72A 225W E2

0

MID200-12A4

MID200-12A4

Wickmann / Littelfuse

IGBT MOD 1200V 270A 1130W Y3DCB

6

MIXG120W1200TEH

MIXG120W1200TEH

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E3-PACK-PF

10

MIXG180W1200TEH

MIXG180W1200TEH

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E3-PACK-PF

15

MUBW15-06A6K

MUBW15-06A6K

Wickmann / Littelfuse

IGBT MODULE 600V 19A 75W E1

0

MIXA80W1200TEH

MIXA80W1200TEH

Wickmann / Littelfuse

IGBT MODULE 1200V 120A 390W E3

0

MIXA60HU1200VA

MIXA60HU1200VA

Wickmann / Littelfuse

IGBT MOD 1200V 85A 290W V1A-PAK

0

MID100-12A3

MID100-12A3

Wickmann / Littelfuse

IGBT MODULE 1200V 135A 560W Y4M5

0

MIXA20WB1200TED

MIXA20WB1200TED

Wickmann / Littelfuse

IGBT MODULE 1200V 28A 100W E2

0

MIXA10WB1200TED

MIXA10WB1200TED

Wickmann / Littelfuse

IGBT MODULE 1200V 17A 60W E2

30

MDI550-12A4

MDI550-12A4

Wickmann / Littelfuse

IGBT MOD 1200V 670A 2750W Y3DCB

0

MUBW50-12A8

MUBW50-12A8

Wickmann / Littelfuse

IGBT MODULE 1200V 85A 350W E3

0

IXXN200N60C3H1

IXXN200N60C3H1

Wickmann / Littelfuse

IGBT MOD 600V 200A 780W SOT227B

280

MID550-12A4

MID550-12A4

Wickmann / Littelfuse

IGBT MOD 1200V 670A 2750W Y3DCB

42

MUBW75-12T8

MUBW75-12T8

Wickmann / Littelfuse

IGBT MODULE 1200V 110A 355W E3

0

MIXG180W1200PTEH

MIXG180W1200PTEH

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E3-PACK-PF

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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