Transistors - IGBTs

Transistors - IGBTs - Modules

Image	Part Number	Description / PDF	Quantity	Rfq
	VS-GB75LA60UF Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 109A 447W SOT227	0
	VS-GT100DA120U Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 258A 893W SOT227	0
	VS-GT100DA60U Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 184A 577W SOT227	0
	VS-GB70NA60UF Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 111A 447W SOT227	0
	VS-GA200SA60SP Vishay General Semiconductor – Diodes Division	IGBT MODULE 600V 781W SOT227	0
	VS-GB50NA120UX Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 84A 431W SOT227	0
	VS-150MT060WDF Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 138A 12MTP PRESS	0
	VS-GT50TP60N Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 85A 208W INT-A-PAK	0
	VS-GB100TS60NPBF Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 108A INT-A-PAK	0
	VS-GB300TH120U Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 530A INT-A-PAK	0
	VS-GB200LH120N Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 370A INT-A-PAK	0
	VS-GP300TD60S Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 580A INT-A-PAK	0
	VS-GB300NH120N Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 500A INT-A-PAK	0
	VS-GA100TS120UPBF Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 182A INT-A-PAK	0
	VS-GB100TP120U Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 150A INT-A-PAK	0
	VS-GB200TH120U Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 330A INT-A-PAK	0
	VS-GB150TS60NPBF Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 138A INT-A-PAK	0
	VS-GP100TS60SFPBF Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 337A INT-A-PAK	0
	VS-VSHPS1445 Vishay General Semiconductor – Diodes Division	MOSFET MODULE SIP SWITCH	0
	VS-GB300TH120N Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 500A INT-A-PAK	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability