Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
GSID100A120T2C1

GSID100A120T2C1

SemiQ

IGBT MOD 1200V 200A 640W

0

GSID150A120T2C1

GSID150A120T2C1

SemiQ

IGBT MOD 1200V 285A 1087W

0

GSID100A120T2C1A

GSID100A120T2C1A

SemiQ

IGBT MOD 1200V 200A 800W

0

GSID150A120S3B1

GSID150A120S3B1

SemiQ

IGBT MODULE 1200V 300A 940W D3

0

GSID100A120T2P2

GSID100A120T2P2

SemiQ

IGBT MOD 1200V 200A 710W

0

GSID200A170S3B1

GSID200A170S3B1

SemiQ

IGBT MODULE 1200V 400A 1630W D3

0

GSID150A120S6A4

GSID150A120S6A4

SemiQ

IGBT MOD 1200V 275A 1035W

0

GSID600A120S4B1

GSID600A120S4B1

SemiQ

IGBT MOD 1200V 1130A 3060W

12

GSID080A120B1A5

GSID080A120B1A5

SemiQ

IGBT MOD 1200V 160A 1710W

0

GSID150A120S5C1

GSID150A120S5C1

SemiQ

IGBT MOD 1200V 285A 1087W

0

GSID100A120S5C1

GSID100A120S5C1

SemiQ

IGBT MOD 1200V 170A 650W

0

GSID200A120S5C1

GSID200A120S5C1

SemiQ

IGBT MODULE 1200V 335A

0

GSID300A120S5C1

GSID300A120S5C1

SemiQ

IGBT MOD 1200V 430A 1630W

1

GSID300A125S5C1

GSID300A125S5C1

SemiQ

IGBT MOD 1250V 600A 2500W

2

GSID200A120S3B1

GSID200A120S3B1

SemiQ

IGBT MODULE 1200V 400A 1595W D3

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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