Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
CM75TU-34KA

CM75TU-34KA

Powerex, Inc.

IGBT MOD 1700V 75A 660W

0

CM400DU-24H

CM400DU-24H

Powerex, Inc.

IGBT MOD 1200V 400A 2100W

0

QIS4506002

QIS4506002

Powerex, Inc.

IGBT MODULE 4500V 60A

0

CM1200HA-24J

CM1200HA-24J

Powerex, Inc.

IGBT MOD 1200V 1200A 5800W

0

CM100TL-12NF

CM100TL-12NF

Powerex, Inc.

IGBT MOD 600V 100A 540W

0

CM50BU-24H

CM50BU-24H

Powerex, Inc.

IGBT MOD 1200V 50A 400W

0

CM200TU-5F

CM200TU-5F

Powerex, Inc.

IGBT MOD 250V 200A 600W

0

CM150DY-34A

CM150DY-34A

Powerex, Inc.

IGBT MOD 1700V 150A 1600W

0

CM200TL-24NF

CM200TL-24NF

Powerex, Inc.

IGBT MOD 1200V 200A 1160W

0

CM400DY-24NF

CM400DY-24NF

Powerex, Inc.

IGBT MOD 1200V 400A 1470W

0

CM50DY-28H

CM50DY-28H

Powerex, Inc.

IGBT MOD 1400V 50A 400W

0

CM300HA-24H

CM300HA-24H

Powerex, Inc.

IGBT MOD 1200V 300A 2100W

0

CM300DU-12H

CM300DU-12H

Powerex, Inc.

IGBT MOD 600V 300A 890W

0

CM300DU-12F

CM300DU-12F

Powerex, Inc.

IGBT MOD 600V 300A 830W

0

CM100BU-12H

CM100BU-12H

Powerex, Inc.

IGBT MOD 600V 100A 400W

0

CM100TL-24NF

CM100TL-24NF

Powerex, Inc.

IGBT MOD 1200V 100A 620W

0

CM200DY-28H

CM200DY-28H

Powerex, Inc.

IGBT MOD 1400V 200A 1500W

0

CM100RX-12A

CM100RX-12A

Powerex, Inc.

IGBT MOD 600V 100A 400W

0

CM75TU-24F

CM75TU-24F

Powerex, Inc.

IGBT MOD 1200V 75A 450W

0

CM75RX-24A

CM75RX-24A

Powerex, Inc.

IGBT MOD 1200V 75A 500W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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