Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
FF900R12IP4DVBOSA1 IR (Infineon Technologies)	FF900R12 - INSULATED GATE BIPOLA	15
FP10R06W1E3B11BOMA1 IR (Infineon Technologies)	IGBT MODULE 600V 16A 68W	0
APTGT100A60T1G Roving Networks / Microchip Technology	IGBT MODULE 600V 150A 340W SP1	0
FF400R12KE3HOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 580A 2000W	31
FZ900R12KP4HOSA1 IR (Infineon Technologies)	IGBT MODULE 1200V 900A	0
DF1000R17IE4DB2BOSA1 IR (Infineon Technologies)	IGBT MODULE 1700V 6250W	0
FF450R12ME3BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 600A 2100W	0
FP35R12W2T4B11BOMA1 IR (Infineon Technologies)	IGBT MOD 1200V 54A 215W	13
FF300R12MS4BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 370A 1950W	0
APTGL60DDA120T3G Roving Networks / Microchip Technology	IGBT MODULE 1200V 80A 280W SP3	0
FZ1600R17HP4B21BOSA2 IR (Infineon Technologies)	IGBT MODULE 1700V 1600A	0
APT40GP90JDQ2 Roving Networks / Microchip Technology	IGBT MODULE 900V 64A 284W ISOTOP	0
FMG2G200US60	IGBT, 200A, 600V, N-CHANNEL	0
IFF600B12ME4B11BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 600A 20MW ECONO	0
FZ30R07W1E3B31ABOMA1 IR (Infineon Technologies)	IGBT MODULE	18
FP25R12KE3BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 40A 155W	0
APTCV60TLM99T3G Roving Networks / Microchip Technology	IGBT MODULE 600V 50A 90W SP3	0
DF80R12W2H3FB11BPSA1 IR (Infineon Technologies)	IGBT MOD 1200V 20A 20MW	15
VS-GT80DA120U Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 139A 658W SOT227	98
IXGN82N120C3H1 Wickmann / Littelfuse	IGBT MOD 1200V 130A 595W SOT227B	660

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability