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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
BUK7618-55,118

BUK7618-55,118

Nexperia

MOSFET N-CH 55V 57A D2PAK

0
BUK9612-55B,118

BUK9612-55B,118

Nexperia

MOSFET N-CH 55V 75A D2PAK

3203
PSMN013-80YS,115

PSMN013-80YS,115

Nexperia

MOSFET N-CH 80V 60A LFPAK56

2235
BUK9520-100A,127

BUK9520-100A,127

Nexperia

PFET, 63A I(D), 100V, 0.022OHM,

2996
PMPB20EN,115

PMPB20EN,115

Nexperia

MOSFET N-CH 30V 7.2A DFN2020MD-6

8029
NX3008NBKMB,315

NX3008NBKMB,315

Nexperia

MOSFET N-CH 30V 530MA DFN1006B-3

2
PMN42XPEAX

PMN42XPEAX

Nexperia

MOSFET P-CH 20V 4A 6TSOP

0
BUK969R3-100E,118

BUK969R3-100E,118

Nexperia

MOSFET N-CH 100V 100A D2PAK

0
PMV88ENEAR

PMV88ENEAR

Nexperia

MOSFET N-CH 60V 2.2A TO236AB

3909
BUK964R2-55B,118

BUK964R2-55B,118

Nexperia

MOSFET N-CH 55V 75A D2PAK

0
BUK7528-100A,127

BUK7528-100A,127

Nexperia

PFET, 47A I(D), 100V, 0.028OHM,

5528
BUK7513-75B,127

BUK7513-75B,127

Nexperia

PFET, 75A I(D), 75V, 0.013OHM, 1

5636
BUK963R3-60E,118

BUK963R3-60E,118

Nexperia

MOSFET N-CH 60V 120A D2PAK

1
PMZB550UNEYL

PMZB550UNEYL

Nexperia

MOSFET N-CH 30V 590MA DFN1006B-3

1350
2N7002BK,215

2N7002BK,215

Nexperia

MOSFET N-CH 60V 350MA TO236AB

896623
PSMN011-60MLX

PSMN011-60MLX

Nexperia

MOSFET N-CH 60V 61A LFPAK33

0
BUK9M14-40EX

BUK9M14-40EX

Nexperia

MOSFET N-CH 40V 44A LFPAK33

4512
BUK9Y7R2-60E,115

BUK9Y7R2-60E,115

Nexperia

MOSFET N-CH 60V 100A LFPAK56

264
BSS138BKW,115

BSS138BKW,115

Nexperia

MOSFET N-CH 60V 320MA SOT323

37898
PMN30UNEX

PMN30UNEX

Nexperia

MOSFET N-CH 20V 4.8A 6TSOP

1985

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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