Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN011-60MSX Nexperia	MOSFET N-CH 60V 61A LFPAK33	0
PMV28ENEAR Nexperia	MOSFET N-CH 30V 4.4A TO236AB	1216
PSMN017-30EL,127 Nexperia	MOSFET N-CH 30V 32A I2PAK	2901
PHP191NQ06LT,127 Nexperia	MOSFET N-CH 55V 75A TO220AB	211
PMCM4401UNEZ Nexperia	MOSFET N-CH 20V 4WLCSP	0
BSH121,135 Nexperia	SMALL SIGNAL FIELD-EFFECT TRANSI	25581
PSMN085-150K,518-NEX Nexperia	POWER FIELD-EFFECT TRANSISTOR, 3	0
PSMN2R8-40YSDX Nexperia	MOSFET N-CH 40V 160A LFPAK56	1155
2N7002BKS/DG/B2115 Nexperia	N-CHANNEL SMALL SIGNAL MOSFET	27000
BUK9675-55A,118 Nexperia	MOSFET N-CH 55V 20A D2PAK	6001
PSMN1R0-40SSHJ Nexperia	MOSFET N-CH 40V 325A LFPAK88	1767
PSMN6R0-30YL,115 Nexperia	MOSFET N-CH 30V 79A LFPAK56	0
BUK7635-100A,118 Nexperia	MOSFET N-CH 100V 41A D2PAK	4351
PSMN017-80BS,118 Nexperia	MOSFET N-CH 80V 50A D2PAK	5775
BUK7J1R4-40HX Nexperia	MOSFET N-CH 40V 190A LFPAK56	0
BUK763R1-60E,118 Nexperia	MOSFET N-CH 60V 120A D2PAK	1736
BUK9M6R7-40HX Nexperia	MOSFET N-CH 40V 50A LFPAK33	5870
BUK7E2R3-40E,127 Nexperia	MOSFET N-CH 40V 120A I2PAK	300
PMV450ENEAR Nexperia	MOSFET N-CH 60V 800MA TO236AB	2186
PMZ600UNEYL Nexperia	MOSFET N-CH 20V 600MA DFN1006-3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS