Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN2R6-60PSQ Nexperia	MOSFET N-CH 60V 150A TO220AB	66
BUK6D43-40PX Nexperia	MOSFET P-CH 40V 6A DFN2020MD-6	0
BUK6D30-40EX Nexperia	MOSFET N-CH 40V 6A/18A 6DFN	2770
PMZB390UNEYL Nexperia	MOSFET N-CH 30V 900MA DFN1006B-3	58
PSMN1R0-40YSHX Nexperia	MOSFET N-CH 40V 290A LFPAK56	787
BUK764R0-75C,118 Nexperia	MOSFET N-CH 75V 100A D2PAK	17637
PMN52XPX Nexperia	MOSFET P-CH 20V 3.7A 6TSOP	51
PMN42XPE,115 Nexperia	MOSFET P-CH 20V 4A 6TSOP	36000
BUK762R9-40E,118 Nexperia	MOSFET N-CH 40V 100A D2PAK	70
BSS138BK,215 Nexperia	MOSFET N-CH 60V 360MA TO236AB	164153
PSMN2R6-30YLC,115 Nexperia	MOSFET N-CH 30V 100A LFPAK56	31
BUK7907-55ATE127 Nexperia	N-CHANNEL POWER MOSFET	990
PHB21N06LT,118 Nexperia	MOSFET N-CH 55V 19A D2PAK	880
PMZ1200UPEYL Nexperia	MOSFET P-CH 30V 410MA DFN1006-3	21
PSMN1R1-30PL,127 Nexperia	MOSFET N-CH 30V 120A TO220AB	5290
BUK9M7R2-40EX Nexperia	MOSFET N-CH 40V 70A LFPAK33	61
BUK9275-100A,118 Nexperia	MOSFET N-CH 100V 21.7A DPAK	6254
BUK762R6-40E,118 Nexperia	MOSFET N-CH 40V 100A D2PAK	4796
PMCM440VNEZ Nexperia	MOSFET N-CH 12V 3.9A 4WLCSP	90000
PMV45EN2R Nexperia	MOSFET N-CH 30V 4.1A TO236AB	28042

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS