Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN013-100ES,127 Nexperia	POWER FIELD-EFFECT TRANSISTOR, 6	3989
BUK7Y22-100EX Nexperia	MOSFET N-CH 100V 49A LFPAK56	0
PSMN012-80PS,127 Nexperia	MOSFET N-CH 80V 74A TO220AB	21322
BUK9M20-40HX Nexperia	MOSFET N-CH 40V 25A LFPAK33	899
BUK9M24-40EX Nexperia	BUK9M24-40E - N-CHANNEL 40 V, 24	2550
BUK762R4-60E,118 Nexperia	MOSFET N-CH 60V 120A D2PAK	4162
PMPB215ENEAX Nexperia	MOSFET N-CH 80V 1.9A DFN2020MD-6	5
PSMN1R5-30YLC,115 Nexperia	MOSFET N-CH 30V 100A LFPAK56	309
PMPB27EPAX Nexperia	MOSFET P-CH 30V 6.1A DFN2020MD-6	0
PMPB13XNE,115 Nexperia	MOSFET N-CH 30V 8A DFN2020MD-6	270750
PSMN5R3-25MLDX Nexperia	PSMN5R3-25MLD - N-CHANNEL 25V, L	15133
BUK9607-30B,118 Nexperia	PFET, 108A I(D), 30V, 0.007OHM,	3387
BUK7Y15-60EX Nexperia	MOSFET N-CH 60V 53A LFPAK56	0
PSMN4R6-60BS,118 Nexperia	MOSFET N-CH 60V 100A D2PAK	95
PMT200EPEX Nexperia	MOSFET P-CH 70V 2.4A SOT223	0
PSMN9R1-30YL,115 Nexperia	MOSFET N-CH 30V 57A LFPAK56	0
NX7002BKHH Nexperia	MOSFET N-CH 60V 350MA DFN0606-3	5041
PMZ370UNEYL Nexperia	MOSFET N-CH 30V 900MA DFN1006-3	10904
BUK7909-75AIE,127 Nexperia	MOSFET N-CH 75V 75A TO220-5	3772
PHD9NQ20T,118 Nexperia	MOSFET N-CH 200V 8.7A DPAK	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS