Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Image	Part Number	Description / PDF	Quantity	Rfq
	JAN2N6800 Microsemi	MOSFET N-CH 400V 3A TO39	0
	APTM20SKM05G Microsemi	MOSFET N-CH 200V 317A SP6	0
	2N6790U Microsemi	MOSFET N-CH 200V 2.8A 18ULCC	0
	JANTX2N7227 Microsemi	MOSFET N-CH 400V 14A TO254AA	0
	JANTXV2N6802U Microsemi	MOSFET N-CH 500V 2.5A 18ULCC	0
	JAN2N6770 Microsemi	MOSFET N-CH 500V 12A TO204AE	0
	JAN2N7227U Microsemi	MOSFET N-CH 400V 14A TO267AB	0
	JANTXV2N6898 Microsemi	MOSFET P-CHANNEL 100V 25A TO3	0
	JAN2N6788U Microsemi	MOSFET N-CH 100V 4.5A 18ULCC	0
	APTML60U12R020T1AG Microsemi	MOSFET N-CH 600V 45A SP1	0
	JANTXV2N6770T1 Microsemi	MOSFET N-CH 500V 12A TO254AA	0
	JANTX2N6798U Microsemi	MOSFET N-CH 200V 5.5A 18ULCC	0
	2N7225U Microsemi	MOSFET N-CH 200V 27.4A TO267AB	0
	JANTX2N6798 Microsemi	MOSFET N-CH 200V 5.5A TO205AF	0
	APT1002RBNG Microsemi	MOSFET N-CH 1000V 8A TO247AD	0
	2N6770T1 Microsemi	MOSFET N-CH 500V 12A TO254AA	0
	2N7227U Microsemi	MOSFET N-CH 400V 14A TO267AB	0
	JANSR2N7268U Microsemi	MOSFET N-CH 100V 34A U1	0
	APTC60DAM24T1G Microsemi	MOSFET N-CH 600V 95A SP1	0
	JAN2N7225U Microsemi	MOSFET N-CH 200V 27.4A TO267AB	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS