Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
CSD16556Q5B Texas Instruments	MOSFET N-CH 25V 100A 8VSON	0
CSD19538Q2T Texas Instruments	MOSFET N-CH 100V 13.1A 6WSON	18139750
CSD18510Q5BT Texas Instruments	MOSFET N-CH 40V 300A 8VSON	329
CSD18514Q5A Texas Instruments	MOSFET N-CH 40V 89A 8VSON	5139
CSD17571Q2 Texas Instruments	MOSFET N-CH 30V 22A 6SON	13178
TPIC5421LDW Texas Instruments	N-CHANNEL POWER MOSFET	0
CSD16411Q3 Texas Instruments	MOSFET N-CH 25V 14A/56A 8VSON	16686
CSD18511Q5AT Texas Instruments	MOSFET N-CH 40V 159A 8VSON	552
CSD16570Q5B Texas Instruments	MOSFET N-CH 25V 100A 8VSON	6268
CSD18511Q5A Texas Instruments	MOSFET N-CH 40V 159A 8VSON	0
CSD18532NQ5B Texas Instruments	MOSFET N-CH 60V 22A/100A 8VSON	4380
CSD18512Q5BT Texas Instruments	MOSFET N-CH 40V 211A 8VSON	130
CSD13381F4 Texas Instruments	MOSFET N-CH 12V 2.1A 3PICOSTAR	0
CSD17578Q3AT Texas Instruments	MOSFET N-CH 30V 20A 8VSON	8684750
CSD16342Q5A Texas Instruments	MOSFET N-CH 25V 100A 8VSON	2723
CSD25501F3 Texas Instruments	MOSFET P-CH 20V 3.6A 3LGA	0
CSD17575Q3T Texas Instruments	MOSFET N-CH 30V 60A 8VSON	4253
CSD18510KTT Texas Instruments	MOSFET N-CH 40V 274A DDPAK	385
CSD25310Q2 Texas Instruments	MOSFET P-CH 20V 20A 6WSON	0
CSD18511KCS Texas Instruments	MOSFET N-CH 40V 194A TO220-3	3993900

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS