Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Image	Part Number	Description / PDF	Quantity	Rfq
	AO3401L Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 30V 4.2A SOT23-3	0
	AO3485 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 20V 4A SOT23-3	0
	AOTF10N90 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 900V 10A TO220-3F	0
	AO7404 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 20V 1A SC70-3	0
	AOB2918L Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 100V 13A/90A TO263	0
	AO4441L_001 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 60V 4A 8SOIC	0
	AOI516_001 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 18A/46A TO251B	0
	AO4450 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 40V 7A 8SO	0
	AOT10N60_001 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 600V 10A TO220-3	0
	AO4314 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 36V 20A 8SOIC	0
	AOT12N60FDL Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 600V 12A TO220	0
	AO4771L Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 30V 4A 8SOIC	0
	AO4449_101 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 30V 7A 8SOIC	0
	AOB264L Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 60V 19A/140A TO263	0
	AOD2908_001 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 100V TO-252	0
	AON7400 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 10A/26A 8DFN	0
	AO4312 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 36V 23A 8SOIC	0
	AO3481 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 30V 4A SOT23-3	0
	AOC2423 Alpha and Omega Semiconductor, Inc.	MOSFET P-CH 20V 2A 4ALPHADFN	0
	AO4568 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 12A 8SOIC	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS