Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
MMFTN20 Diotec Semiconductor	MOSFET N-CH 50V 100MA SOT23-3	0
MMFTP3401 Diotec Semiconductor	MOSFET P-CH 30V 3A SOT23-3	0
DIT120N08 Diotec Semiconductor	MOSFET N-CH 80V 120A TO220AB	1500
DIT050N06 Diotec Semiconductor	MOSFET N-CH 60V 50A TO220AB	0
2N7002A Diotec Semiconductor	MOSFET N-CH 60V 280MA SOT23-3	0
MMFTN3018W Diotec Semiconductor	MOSFET N-CH 30V 100MA SOT323	48000
MMBT7002K-AQ Diotec Semiconductor	MOSFET N-CH 60V 300MA SOT23-3	0
DI080N03PQ Diotec Semiconductor	MOSFET N-CH 30V 80A 8QFN	5000
MMFTP84 Diotec Semiconductor	MOSFET P-CH 60V 130MA SOT23-3	3000
DIT150N03 Diotec Semiconductor	MOSFET N-CH 30V 150A TO220AB	200
DI020N06D1 Diotec Semiconductor	MOSFET N-CH 60V 20A TO252-3 DPAK	0
DIT195N08 Diotec Semiconductor	MOSFET N-CH 85V 195A TO220AB	850
MMBT7002K Diotec Semiconductor	MOSFET N-CH 60V 300MA SOT23-3	27000
MMFTN138 Diotec Semiconductor	MOSFET N-CH 50V 220MA SOT23-3	0
MMFTN3402 Diotec Semiconductor	MOSFET N-CH 30V 1.9A SOT23-3	0
DI150N03PQ Diotec Semiconductor	MOSFET N-CH 30V 100A 8QFN	0
MMFTN6001 Diotec Semiconductor	MOSFET N-CH 60V 440MA SOT23-3	0
DI030N03D1 Diotec Semiconductor	MOSFET N-CH 30V 30A TO252-3 DPAK	0
DI110N03PQ Diotec Semiconductor	MOSFET N-CH 30V 110A 8QFN	5000
DI015N25D1 Diotec Semiconductor	MOSFET N-CH 250V 15A TO252-3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS