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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMNH6042SPS-13

DMNH6042SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 24A PWRDI5060-8

0
DMPH1006UPSQ-13

DMPH1006UPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 12V 80A PWRDI5060-8

3838
DMN30H4D0LFDE-13

DMN30H4D0LFDE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 300V 550MA 6UDFN

0
DMN3009LFVW-7

DMN3009LFVW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 60A POWERDI3333

2000
ZVP1320FTA

ZVP1320FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 200V 35MA SOT23-3

41616
DMTH6016LFDFW-13

DMTH6016LFDFW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 9.4A 6UDFN

0
DMN6068SE-13

DMN6068SE-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 4.1A SOT223

6725
DMG1013UW-7

DMG1013UW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 820MA SOT323

396152
DMG4800LK3-13

DMG4800LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 10A TO252-3

48537500
DMT10H072LFDF-13

DMT10H072LFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 4A 6UDFN

0
DMT35M7LFV-7

DMT35M7LFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 76A POWERDI3333

0
DMN4035LQ-13

DMN4035LQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 4.6A SOT23

0
DMN10H220L-7

DMN10H220L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 1.4A SOT23

219136
DMP21D6UFD-7

DMP21D6UFD-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 600MA 3DFN

2147483647
DMN33D8LTQ-7

DMN33D8LTQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 115MA SOT523

90000
DMN63D8L-13

DMN63D8L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 350MA SOT23-3

150000
DMN66D0LW-7

DMN66D0LW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 115MA SOT323

102000
DMP4065S-7

DMP4065S-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 2.4A SOT23

0
DMP3007LK3-13

DMP3007LK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 18.5A TO252

0
DMN53D0LW-13

DMN53D0LW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 360MA SOT323

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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