Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
CEDM8004 TR PBFREE Central Semiconductor	MOSFET P-CH 30V 450MA SOT883VL	2147483647
CDM2208-800FP SL PBFREE Central Semiconductor	MOSFET N-CH 800V 8A TO220FP	0
CMUDM7005 TR PBFREE Central Semiconductor	MOSFET N-CH 20V 650MA SOT523	2147483647
CXDM4060N TR PBFREE Central Semiconductor	MOSFET N-CH 40V 6A SOT-89	11346000
CMLDM8120G TR PBFREE Central Semiconductor	MOSFET P-CH 20V 860MA SOT563	2147483647
CXDM3069N TR PBFREE Central Semiconductor	MOSFET N-CH 30V 6.9A SOT-89	36000
CMPDM7002AHC TR PBFREE Central Semiconductor	MOSFET N-CH 60V 1A SOT23	2147483647
CEDM7001 BK PBFREE Central Semiconductor	MOSFET N-CH 20V 100MA SOT883	15000
CMUDM7004 TR PBFREE Central Semiconductor	MOSFET N-CH 30V 450MA SOT523	1812530000
CDM22012-800LRFP SL Central Semiconductor	MOSFET N-CH 800V 12A TO220FP	102
CEDM7004 BK PBFREE Central Semiconductor	MOSFET N-CH 30V 1.78A SOT-883	0
CWDM305P TR13 PBFREE Central Semiconductor	MOSFET P-CH 30V 5.3A 8SOIC	0
CDM22010-650 SL Central Semiconductor	MOSFET N-CH 650V 10A TO220	566
CZDM1003N BK Central Semiconductor	MOSFET N-CH 100V 3A SOT-223	0
CTLDM7120-M621H TR Central Semiconductor	MOSFET N-CH 20V 1A TLM621H	0
CDM2206-800LR SL PBFREE Central Semiconductor	MOSFET N-CH 800V 6A TO220	0
CZDM1003N TR Central Semiconductor	MOSFET N-CH 100V 3A SOT-223	0
CMPDM203NH TR Central Semiconductor	MOSFET N-CH 20V 3.2A SOT-23F	0
CTLDM7002A-M621 TR Central Semiconductor	MOSFET N-CH 60V 280MA TLM621	0
CTLDM8120-M621H BK Central Semiconductor	MOSFET P-CH 20V 950MA TLM621H	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS