Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
UF3C120150K3S UnitedSiC	SICFET N-CH 1200V 18.4A TO247-3	596
UF3SC065040B7S UnitedSiC	650V/40MOHM, SIC, STACKED FAST C	789
UJ3C065080T3S UnitedSiC	MOSFET N-CH 650V 31A TO220-3	823
UJ4C075060K4S UnitedSiC	SICFET N-CH 750V 28A TO247-4	0
UJ3C065080B3 UnitedSiC	MOSFET N-CH 650V 25A TO263	686
UF3C065080K3S UnitedSiC	MOSFET N-CH 650V 31A TO247-3	593
UF3C120150B7S UnitedSiC	1200V/150MOHM, SIC, FAST CASCODE	0
UF3C120080K4S UnitedSiC	SICFET N-CH 1200V 33A TO247-4	337
UJ3C065030B3 UnitedSiC	MOSFET N-CH 650V 65A TO263	760
UF3C120400K3S UnitedSiC	SICFET N-CH 1200V 7.6A TO247-3	456
UJ4C075018K3S UnitedSiC	SICFET N-CH 750V 81A TO247-3	920
UJ3C120150K3S UnitedSiC	SICFET N-CH 1200V 18.4A TO247-3	799
UF3C120040K4S UnitedSiC	SICFET N-CH 1200V 65A TO247-4	506
UF3SC120040B7S UnitedSiC	1200V/40MOHM, SIC, STACKED FAST	692
UF3C170400K3S UnitedSiC	SICFET N-CH 1700V 7.6A TO247-3	4813
UJ4C075018K4S UnitedSiC	SICFET N-CH 750V 81A TO247-4	294
UF3SC065007K4S UnitedSiC	MOSFET N-CH 650V 120A TO247-4	441
UF3SC065040D8S UnitedSiC	SICFET N-CH 650V 18A 4DFN	2464
UJ3C120070K3S UnitedSiC	SICFET N-CH 1200V 34.5A TO247-3	1794
UF3C065030K4S UnitedSiC	MOSFET N-CH 650V 85A TO247-4	344

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS