Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TPH3208LDG Transphorm	GANFET N-CH 650V 20A 3PQFN	285
TPH3205WSBQA Transphorm	GANFET N-CH 650V 35A TO247-3	406
TPH3208PD Transphorm	GANFET N-CH 650V 20A TO220AB	76
TP90H180PS Transphorm	GANFET N-CH 900V 15A TO220AB	0
TPH3208PS Transphorm	GANFET N-CH 650V 20A TO220AB	892
TPH3212PS Transphorm	GANFET N-CH 650V 27A TO220AB	559
TPH3202PS Transphorm	GANFET N-CH 600V 9A TO220AB	0
TPH3202LD Transphorm	GANFET N-CH 600V 9A 4PQFN	0
TPH3207WS Transphorm	GANFET N-CH 650V 50A TO247-3	22
TPH3208LD Transphorm	GANFET N-CH 650V 20A 4PQFN	0
TP65H300G4LSG Transphorm	GANFET N-CH 650V 6.5A 3PQFN	240
TPH3205WSB Transphorm	GANFET N-CH 650V 36A TO247-3	43
TP90H050WS Transphorm	GANFET N-CH 900V 34A TO247-3	328
TPH3206PS Transphorm	GANFET N-CH 600V 17A TO220AB	560
TPH3206PSB Transphorm	GANFET N-CH 650V 16A TO220AB	1490
TP65H035WSQA Transphorm	GANFET N-CH 650V 47.2A TO247-3	420
TPH3208LS Transphorm	GANFET N-CH 650V 20A 3PQFN	0
TPH3206LSB Transphorm	GANFET N-CH 650V 16A PQFN	5118
TP65H480G4JSG-TR Transphorm	GANFET N-CH 650V 3.6A 3PQFN	328
TP65H070LDG Transphorm	GANFET N-CH 650V 25A 3PQFN	673

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS