Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STP24N60M2 STMicroelectronics	MOSFET N-CH 600V 18A TO220	193
STP4N80K5 STMicroelectronics	MOSFET N-CH 800V 3A TO220	0
STP28NM60ND STMicroelectronics	MOSFET N-CH 600V 23A TO220	375
STB45N60DM2AG STMicroelectronics	MOSFET N-CH 600V 34A D2PAK	1093
STD11N60M2-EP STMicroelectronics	MOSFET N-CH 600V 7.5A DPAK	13520
STD80N4F6 STMicroelectronics	MOSFET N-CH 40V 80A DPAK	1225
STR2P3LLH6 STMicroelectronics	MOSFET P-CH 30V 2A SOT-23	2160
STI4N62K3 STMicroelectronics	MOSFET N-CH 620V 3.8A I2PAK	0
STP14NF10 STMicroelectronics	MOSFET N-CH 100V 15A TO220AB	3506
STP36N60M6 STMicroelectronics	MOSFET N-CHANNEL 600V 30A TO220	174
STW77N65M5 STMicroelectronics	MOSFET N-CH 650V 69A TO247-3	151
STD65N55F3 STMicroelectronics	MOSFET N-CH 55V 80A DPAK	0
STF42N65M5 STMicroelectronics	MOSFET N-CH 650V 33A TO220FP	0
STD10N60DM2 STMicroelectronics	MOSFET N-CH 650V 8A DPAK	2490
STF6N60DM2 STMicroelectronics	MOSFET N-CH 600V 5A TO220FP	0
STD3NK100Z STMicroelectronics	MOSFET N-CH 1000V 2.5A DPAK	1363
STP11N60DM2 STMicroelectronics	MOSFET N-CH 600V 10A TO220	0
STFH18N60M2 STMicroelectronics	MOSFET N-CH 600V 13A TO220FP	443
STB80N20M5 STMicroelectronics	MOSFET N-CH 200V 61A D2PAK	57
STL9N65M2 STMicroelectronics	MOSFET N-CH 650V POWERFLAT 5X5 H	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS