Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
3LP03M-TL-E Sanyo Denki SanUPS Products	P-CHANNEL SILICON MOSFET	6000
ATP203-TL-H Sanyo Denki SanUPS Products	MOSFET N-CH 30V 75A DPAK/ATPAK	8856
NDF02N60ZG Sanyo Denki SanUPS Products	MOSFET N-CH 600V 2.4A TO220-3	183327
2SK3702 Sanyo Denki SanUPS Products	FOR 60V MOTOR DRIVERS	31800
BFL4037 Sanyo Denki SanUPS Products	MOSFET N-CH 500V 11A TO220FI	100
NIF9N05CLT3G-SY Sanyo Denki SanUPS Products	2.6 A, 52 V, N-CHANNEL, LOGIC LE	8000
2SK4124 Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	0
NDF05N50ZH Sanyo Denki SanUPS Products	MOSFET N-CH 500V 5.5A TO220FP	563580
BFL4004 Sanyo Denki SanUPS Products	MOSFET N-CH 800V 4.3A TO220FI	10870
NTMFS4926NET1G Sanyo Denki SanUPS Products	MOSFET N-CH 30V 9A/44A 5DFN	25500
SFT1446-TL-H Sanyo Denki SanUPS Products	MOSFET N-CH 60V 20A TP-FA	20300
ECH8410-TL-H Sanyo Denki SanUPS Products	MOSFET N-CH 30V 12A SOT28FL/ECH8	9000
2SB817D Sanyo Denki SanUPS Products	P-CHANNEL, MOSFET	18798
NTMFS4922NET1G Sanyo Denki SanUPS Products	MOSFET N-CH 30V 17.1A/147A 5DFN	83020
2SK4171 Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	0
CPH6350-TL-E Sanyo Denki SanUPS Products	MOSFET P-CH 30V 6A 6CPH	3000
CPH6443-P-TL-H Sanyo Denki SanUPS Products	MOSFET N-CH 6CPH	60000
MCH6424-TL-E Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	452000
2SK1449 Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	2534
5HN02N Sanyo Denki SanUPS Products	N-CHANNEL SILICON MOSFET	37500

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS