| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
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NXP Semiconductors |
FET RF 2CH 65V 1.91GHZ OM780-4GW |
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NXP Semiconductors |
FET RF 70V 860MHZ NI-360S |
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NXP Semiconductors |
FET RF 65V 1.93GHZ NI-400 |
0 |
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NXP Semiconductors |
FET RF 65V 1.81GHZ NI-880S |
0 |
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NXP Semiconductors |
FET RF 40V 470MHZ TO272-8 WRAP |
0 |
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NXP Semiconductors |
TRANS RF PWR LDMOS 60W 16HSOP |
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NXP Semiconductors |
FET RF 65V 1.93GHZ NI-880S |
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NXP Semiconductors |
IC TRANS LDMOS 140W ACC-8L |
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NXP Semiconductors |
FET RF 65V 2.17GHZ NI-880S |
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NXP Semiconductors |
FET RF 65V 2.17GHZ NI-360S |
0 |
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NXP Semiconductors |
FET RF 65V 1.99GHZ NI-780 |
0 |
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NXP Semiconductors |
TRANS RF N-CH 125W 50V |
0 |
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RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.
| Type | Functional Features | Application Examples |
|---|---|---|
| Junction FET (JFET) | Voltage-controlled device with low noise and high input impedance | Low-noise amplifiers in RF receivers |
| MESFET | Metal-Semiconductor FET with GaAs substrate for high-speed operation | Satellite communication systems |
| HEMT/PHEMT | High-electron-mobility transistor with pseudomorphic structures | 5G base stations, microwave amplifiers |
| LDMOS | Lateral Diffused MOSFET with high power density and thermal stability | Cellular base station amplifiers |
| GaN HEMT | Gallium Nitride-based HEMT for ultra-high frequency/power | Radar systems, 5G mmWave |
RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.
| Parameter | Description | Importance |
|---|---|---|
| Frequency Range | Operational bandwidth (e.g., 0.1-6 GHz) | Determines application suitability |
| Power Output (P1dB) | 1dB compression point (e.g., 10-500W) | Measures linearity and saturation |
| Gain (S21) | Signal amplification ratio (e.g., 10-30 dB) | System sensitivity indicator |
| Efficiency (PAE) | Power-added efficiency (e.g., 40-75%) | Energy consumption metric |
| Input/Output VSWR | Voltage Standing Wave Ratio (e.g., <2:1) | Mismatch loss assessment |
| Manufacturer | Representative Product | Key Specifications |
|---|---|---|
| NXP Semiconductors | MRF1K50GN | 50W GaN HEMT, 1.8-2.7GHz, 70% PAE |
| Wolfspeed (Cree) | CGH4G090400F | 400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness |
| Infineon | BLS14H10LS-250 | 250W LDMOS, 1.8-2.2GHz, 14dB gain |
| MACOM | NPT1007 | SiGe HBT, 7GHz, 18dB gain for 5G |
Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management