1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

5. Application Fields

• Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
• Defense: Radar systems, electronic warfare, UAV communication
• Broadcasting: FM/TV transmitters, satellite uplinks
• Medical: MRI machines, RF ablation equipment
• Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

7. Selection Recommendations

1. Match operating frequency to device transition frequency (f_T)
2. Verify power handling with derating curves under working temperatures
3. Assess package thermal resistance (R_th) for longevity
4. Compare S-parameters for impedance matching requirements
5. Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management